IRF5N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a IDSS Specified at Elevated Temperature fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. PIN CONFIGURATION T SYMBOL TO-220FP D SO URCE DRAIN G ATE Front View G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Ё Continuous Ё Pulsed Gate-to-Source Voltage Ё Continue Ё Non-repetitive Total Power Dissipation Symbol Value Unit A ID 5.0 IDM 20 VGS ±20 V VGSM ±40 V PD 35 W 0.28 W/к TJ, TSTG -55 to 150 к EAS 245 mJ șJC 1.0 к/W șJA 62.5 TL 260 Derate above 25к Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy Ё TJ = 25к (VDD = 100V, VGS = 10V, IL = 7A, L = 10mH, RG = 25ȍ) Thermal Resistance Ё Junction to Case Ё Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds к (1) Pulse Width and frequency is limited by TJ(max) and thermal response Page 1 IRF5N60 ! POWER MOSFET ORDERING INFORMATION Part Number Package IRF5N60 TO-220 Full Pak ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25к. CIRF5N60 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 ӴA) Symbol Min V(BR)DSS 600 Typ Max Units V ӴA Drain-Source Leakage Current (VDS = 600 V, VGS = 0 V) (VDS = 480 V, VGS = 0 V, TJ = 125к) IDSS Gate-Source Leakage Current-Forward (Vgsf = 30 V, VDS = 0 V) IGSSF .................. 100 nA Gate-Source Leakage Current-Reverse (Vgsr = -30 V, VDS = 0 V) IGSSR ................. -100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 ӴA) VGS(th) 5.0 V 50 50 Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.5A) * RDS(on) Forward Transconductance (VDS >ID(ON)*RDS(ON)max , ID = 2.5A) * gFS Input Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDD = 300 V, ID = 2.5 A, VGS = 10 V, RG = 4.7ȍ) * (VDS = 480 V, ID = 5.0 A, VGS = 10 V)* Ciss 3.0 ȍ 1.8..............2.0 2.5..............4.5............... mhos Coss 103 139 pF pF Crss 11 15 pF td(on) 12 17 tr 10 .14. ns ns .................36 . ns .................25.................... ns td(off) tf ........... .....680.............884 . . Qg 21 Qgs 7.6 Qgd 30 ...................7.5................ nC nC nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (ISD =5.0 A,VDD=100V dIS/dt = 100A/µs) VSD ton trr 1.6 ** ................610 V ns ns * Pulse Test: Pulse Width Љ300µs, Duty Cycle Љ1.5% ** Negligible, Dominated by circuit inductance Page 2 IRF5N60 ! POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS Safe Operating Area for TO-220FP Thermal Impedance for TO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Page 3 IRF5N60 POWER MOSFET Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Page 4 IRF5N60 POWER MOSFET TO-220FP MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 L4 Page 5