IRF840 ! POWER MOSFET GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a IDSS and VDS(on) Specified at Elevated Temperature fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. PIN CONFIGURATION SYMBOL D TO-220/TO-220FP G ATE DRAIN SOU RCE Top View 1 2 3 G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Ё Continuous Ё Pulsed Gate-to-Source Voltage Ё Continue Ё Non-repetitive Total Power Dissipation Symbol Value Unit A ID 8.0 IDM 32 VGS ±20 V VGSM ±40 V PD TO-220 W 125 TO-220FP 40 Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy Ё TJ = 25к TJ, TSTG -55 to 150 к EAS 320 mJ șJC 1.0 к/W șJA 62.5 TL 260 (VDD = 100V, VGS = 10V, IL = 8A, L = 10mH, RG = 25ȍ) Thermal Resistance Ё Junction to Case Ё Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds к Page 1 IRF840 ! POWER MOSFET ORDERING INFORMATION Part Number Package IRF840.................................................TO-220 ....................IRF840FP TO-220 Full Package ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25к. C IRF840 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 ӴA) Symbol Min V(BR)DSS 500 Typ Max Units V mA Drain-Source Leakage Current (VDS = 500 V, VGS = 0 V) (VDS = 400 V, VGS = 0 V, TJ = 125к) IDSS Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) IGSSR 100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 ӴA) VGS(th) 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 4.0A) * RDS(on) Drain-Source On-Voltage (VGS = 10 V) (ID = 8.0 A) VDS(on) 0.25 1.0 2.0 0.8 ȍ 5.0 7.2 V Forward Transconductance (VDS = 50 V, ID = 4.0A) * gFS Input Capacitance Ciss 1450 1680 Coss 190 246 pF pF Crss 45.4 144 pF td(on) 15 50 tr 33 72 ns ns td(off) 40 150 ns tf 32 60 ns Qg 40 64 Qgs 8.0 nC nC (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time (RGo + C17n = 9.1ȍ) * Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge (VDS = 400 V, ID = 8.0 A, VGS = 10 V)* 4.9 mmhos Qgd 17 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH Gate-Drain Charge SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS = 8.0 A, VGS = 0 V, dIS/dt = 100A/µs) VSD 1.5 V ton ** ns trr 320 ns * Pulse Test: Pulse Width Љ300µs, Duty Cycle Љ2% ** Negligible, Dominated by circuit inductance Page 2 ! IRF840 POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS Page 3 ! IRF840 POWE MOSFET Page 4 ! IRF840 POWER MOSFET Page 5