IRF640 POWERTR MOSFET GENERAL DESCRIPTION FEATURES This Power MOSFET is designed for low voltage, high Silicon Gate for Fast Switching Speeds speed power switching applications such as switching Low RDS(on) to Minimize On-Losses. Specified at Elevated Temperature regulators, converters, solenoid and relay drivers. Rugged – SOA is Power Dissipation Limited Source-to-Drain Characterized for Use With Inductive Loads PIN CONFIGURATION SYMBOL D TO-220 SOURCE DRAIN GATE Front View G S 1 2 3 N-Channel MOSFET ORDERING INFORMATION Part Number Package .....................IRF640...............................................TO-220 ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Ё Continuous Ё Pulsed Gate-to-Source Voltage Ё Continue Ё Non-repetitive Total Power Dissipation Symbol Value Unit ID 18 A IDM 72 VGS ±20 VGSM ±40 V PD 125 W 1.00 W/к TJ, TSTG -55 to 150 к EAS 224 mJ șJC 1.00 к/W șJA 62.5 TL 260 Derate above 25к Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy Ё TJ = 25к V (VDD = 100V, VGS = 10V, IL = 18A, L = 1.38mH, RG = 25ȍ) Thermal Resistance Ё Junction to Case Ё Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds к (1) Pulse Width and frequency is limited by TJ(max) and thermal response Page 1 IRF640 POWER MOSFET ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25к. CIRF640 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 ӴA) Symbol Min V(BR)DSS 200 Typ Max Units V mA Drain-Source Leakage Current (VDS = Rated VDSS, VGS = 0 V) (VDS = 0.8Rated VDSS, VGS = 0 V, TJ = 125к) IDSS Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) IGSSR 100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 ӴA) VGS(th) 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 10A) * RDS(on) 0.18 ȍ Drain-Source On-Voltage (VGS = 10 V) (ID = 5.0 A) VDS(on) 6.0 V 0.025 1.0 2.0 Forward Transconductance (VDS = 50 V, ID = 10 A) * gFS Input Capacitance Ciss 1600 Coss 750 pF pF Crss 300 pF td(on) 30 tr 60 ns ns td(off) 80 ns tf 60 ns 63 (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time (VDD = 30 V, ID = 10 A, VGS = 10 V, RG = 4.7ȍ) * Rise Time Turn-Off Delay Time Fall Time Total Gate Charge 6.8 mhos Qg 36 Qgs 16 nC nC Qgd 26 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH Gate-Source Charge Gate-Drain Charge (VDS = 0.8Rated VDSS, ID = Rated ID, VGS = 10 V)* SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS = Rated ID, dIS/dt = 100A/µs) VSD 1.5 V ton ** ns trr 450 ns * Pulse Test: Pulse Width Љ300µs, Duty Cycle Љ2% ** Negligible, Dominated by circuit inductance Page 2 IRF640 POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS Page 3 IRF640 POWER MOSFET Page 4 IRF640 POWER MOSFET Page 5 IRF640 POWER MOSFET ! PACKAGE DIMENSION TO-220 A D c1 PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE E1 E F φ A A1 L1 b b1 c c1 D L E E1 e e1 F L e b1 e1 b A1 c L1 φ Side View Front View Page 6