IRF6N60 ! POWER MOSFET GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a IDSS Specified at Elevated Temperature fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. PIN CONFIGURATION SYMBOL TO-220/TO-220FP D SO URCE DRAIN G ATE Front View G S 1 2 3 N-Channel MOSFET Page 1 IRF6N60 POWER MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Ё Continuous Ё Pulsed Gate-to-Source Voltage Ё Continue Ё Non-repetitive Total Power Dissipation Symbol Value Unit ID 6.0 A IDM 18 VGS ±20 VGSM ±40 PD 125 TO-220FP 45 TJ, TSTG -55 to 150 (VDD = 100V, VGS = 10V, IL = 6A, L = 10mH, RG = 25ȍ) EAS 180 Thermal Resistance Ё Junction to Case șJC 1.0 șJA 62.5 TL 260 Single Pulse Drain-to-Source Avalanche Energy Ё TJ = 25к Ё Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds V W TO-220 Operating and Storage Temperature Range V к mJ к/W к (1) VDD = 50V, ID = 6A (2) Pulse Width and frequency is limited by TJ(max) and thermal response ORDERING INFORMATION Part Number Package IRF6N60...............................................TO-220 ....................IRF6N60FP TO-220 Full Pak TEST CIRCUIT Test Circuit – Avalanche Capability Page 2 IRF6N60 POWER MOSFET ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25к. IRF6N60 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 ӴA) Symbol Min V(BR)DSS 600 Typ Max Units V ӴA Drain-Source Leakage Current (VDS = 600 V, VGS = 0 V) (VDS = 480 V, VGS = 0 V, TJ = 125к) IDSS Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) IGSSR 100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 ӴA) VGS(th) 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 3.5A) * RDS(on) 100 50 Forward Transconductance (VDS = 15 V, ID = 3.0A) * Input Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge (VDD = 300 V, ID = 6.0 A, VGS = 10 V, RG = 9.1ȍ) * (VDS = 300 V, ID = 6.0 A, VGS = 10 V)* gFS 2.0 ȍ 1.2 3.4 mhos Ciss 1498 2100 Coss 158 220 pF pF Crss 29 60 pF td(on) 14 30 tr 19 40 ns ns td(off) 40 80 ns tf 26 55 ns 50 nC nC Qg 35.5 Qgs 8.1 Qgd 14.1 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH VSD 0.83 ton ** ns trr 266 ns Gate-Drain Charge SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS = 6.0 A, dIS/dt = 100A/µs) 1.2 V * Pulse Test: Pulse Width Љ300µs, Duty Cycle Љ2% ** Negligible, Dominated by circuit inductance Page 3 IRF6N60 POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS Page 4 IRF6N60 POWER MOSFET PACKAGE DIMENSION TO-220 A D c1 PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE E1 E F φ A A1 L1 b b1 c c1 D L E E1 e e1 F L b1 L1 A1 c e b e1 φ Side View Front View TO-220FP C I 0 R1 .5 0 0.1 8² 1 . R3 B J H Q D R1 .5 0 A A B C D E E G H I O P K J K 0 .6 R1 M N O P G Q b R b b1 b2 e N M b2 b1 e Front View R Side View Back View Page 5