SJV01N65B 1A , 650V , RDS(ON) 14Ω Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 DESCRIPTION The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes . The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power suppliers, converters and PWM motor controls ,these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. A B E C G H F 1 Gate 2 Drain 3 Source J FEATURES D REF. A B C D E Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 REF. F G H J K Millimeter Min. Max. 0.30 0.51 1.27 TYP. 1.10 1.40 2.42 2.66 0.36 0.76 D 2 1 G 3 S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 1 A Pulsed Drain Current IDM 4 A PD 0.625 W Single Pulsed Avalanche Energy EAS 5 mJ Thermal Resistance Junction-Ambient(Max). RθJA 200 °C / W TL 260 °C TJ, TSTG 150, -50~150 °C Power Dissipation 1 Maximum lead temperure for soldering purposes , 1/8”from case for 5 seconds Operating Junction & Storage Temperature Notes: 1. EAS condition: Tj=25°C, V DD=50V, VGS=10V, L=10mH, IL=1A, RG=25Ω. http://www.SeCoSGmbH.com/ 07-May-2013 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 SJV01N65B 1A , 650V , RDS(ON) 14Ω Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage 1 Gate Threshold Voltage 1 Gate-Source Leakage Current Drain-Source Leakage Current 1 Static Drain-Source On-Resistance Forward On Voltage 1 Symbol Min. Typ. Max. Unit V(BR)DSS 650 - - V VGS=0, ID=250µA VGS(th) 2 - 4 V VDS=VGS, ID=250µA IGSS - - ±100 nA VDS=0, VGS= ±20V IDSS - - 100 µA VDS=600V, VGS=0 RDS(ON) - - 14 Ω VGS=10V, ID=0.6A VSD - - 1.5 V IS=1A, VGS=0 pF VGS=0 VDS=25V f=1.0 MHz nC VDS=480V, VGS=10V, ID=4A nS VDD=300V ID=1A VGS=10V RG=18Ω Dynamic characteristics Teat Conditions 2 Input Capacitance Ciss - 210 - Output Capacitance Coss - 28 - Reverse Transfer Capacitance Crss - 4.2 - Switching characteristics 2 Total Gate Charge Qg - 5 - Gate-Source Charge Qgs - 2.7 - Gate-Drain Charge Qgd - 2 - Turn-on Delay Time Td(on) - 8 - Tr - 21 - Td(off) - 18 - Tf - 24 - Rise Time Turn-off Delay Time Fall Time Notes: 1. Pulse Test : Pulse width≦300µs, duty cycle≦2%. 2. These parameters have no way to verify. http://www.SeCoSGmbH.com/ 07-May-2013 Rev. A Any changes of specification will not be informed individually. Page 2 of 2