IRF7N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a IDSS Specified at Elevated Temperature fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. PIN CONFIGURATION SYMBOL TO-220/TO-220FP D SO URCE DRAIN G ATE Front View G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Ё Continuous Ё Pulsed Gate-to-Source Voltage Ё Continue Ё Non-repetitive Total Power Dissipation Symbol Value Unit A ID 7.0 IDM 20 VGS ±20 V VGSM ±40 V PD W TO-220 147 TO-220FP 50 Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy Ё TJ = 25к TJ, TSTG -55 to 150 к EAS 245 mJ șJC 1.0 к/W șJA 62.5 TL 260 (VDD = 100V, VGS = 10V, IL = 7A, L = 10mH, RG = 25ȍ) Thermal Resistance Ё Junction to Case Ё Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds к (1) Pulse Width and frequency is limited by TJ(max) and thermal response Page 1 IRF7N60 POWER MOSFET ORDERING INFORMATION Part Number Package IRF7N60...............................................TO-220 ....................IRF7N60FP TO-220 Full Pak ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25к. CMT07N60 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 ӴA) Symbol Min V(BR)DSS 600 Typ Max Units V ӴA Drain-Source Leakage Current (VDS = 600 V, VGS = 0 V) (VDS = 480 V, VGS = 0 V, TJ = 125к) IDSS Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) IGSSR 100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 ӴA) VGS(th) 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 3.5A) * RDS(on) 100 100 Forward Transconductance (VDS = 40 V, ID = 3.5A) * Input Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (VDD = 300 V, ID = 7.0 A, VGS = 10 V, RG = 9.1ȍ) * gFS 2.0 1.2 4.0 ȍ mhos Ciss 1380 1800 Coss 115 150 pF pF Crss 23 30 pF td(on) 30 70 tr 80 170 ns ns td(off) 125 260 ns tf 85 180 ns 50 Qg 38 Qgs 6.4 nC nC Qgd 15 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH Gate-Source Charge Gate-Drain Charge (VDS = 480 V, ID = 7.0 A, VGS = 10 V)* SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS =7.0 A, dIS/dt = 100A/µs) VSD 1.4 V ton ** ns trr 415 ns * Pulse Test: Pulse Width Љ300µs, Duty Cycle Љ2% ** Negligible, Dominated by circuit inductance Page 2 IRF7 N60 POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS Page 3 IRF7 N60 POWER MOSFET Page 4 ! IRF7 N60 POWER MOSFET Page 5 IRF7N60 ! POWER MOSFET PACKAGE DIMENSION TO-220 A D c1 PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE E1 E F φ A A1 L1 b b1 c c1 D L E E1 e e1 F L A1 c e b1 b e1 L1 φ Side View Front View TO-220FP C I 0 R1 .5 0 0.1 8² 1 . R3 B J H Q D R1 .5 0 A A B C D E E G H I O P K J K 0 .6 R1 M N O P G Q b R b b1 b2 e N M b2 b1 e Front View R Side View Back View Page 6