SYNSEMI BAY80

BAY80
SWITCHING DIODE
DO - 35 Glass
(DO-204AH)
FEATURES :
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage: max. 120 V
• Repetitive peak reverse voltage: max. 150 V
• Repetitive peak forward current: max. 625 mA.
• Pb / RoHS Free
1.00 (25.4)
min.
0.079(2.0 )max.
0.150 (3.8)
max.
Cathode
Mark
1.00 (25.4)
min.
0.020 (0.52)max.
MECHANICAL DATA :
Case: DO-35 Glass Case
Weight: approx. 0.13g
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Parameter
Symbol
Value
Unit
Maximum Repetitive Peak Reverse Voltage
VRRM
150
V
Maximum Continuous Reverse Voltage
VRM
120
V
Maximum Continuous Forward Current
IF
250
mA
Maximum Average Forward Current
IF(AV)
200
mA
Maximum Repetitive Peak Forward Current
IFRM
625
mA
Maximum Non-repetitive Peak Forward Current at t = 1ms, Tj = 25 °C
IFSM
1
A
Maximum Power Dissipation
PD
400
mW
Maximum Junction Temperature
TJ
175
°C
Storage Temperature Range
TS
-65 to + 175
°C
Electrical Characteristics
(TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Reverse Current
IR
VR = 120 V
VR = 120 V, Tj = 150°C
-
-
100
100
nA
μA
Forward Voltage
VF
IF = 10 mA
0.65
-
0.80
IF = 50 mA
0.73
-
0.92
IF = 100 mA
0.78
-
1.00
Parameter
Diode Capacitance
Reverse Recovery Time
Page 1 of 2
V
IF = 150 mA
-
-
1.07
Cd
f = 1MHz ; VR = 0
-
-
6
pF
Trr
IF = 30mA , I R = 30mA
IRR = 3mA , R L = 100 Ω
measured at IR = 3 mA
-
-
50
ns
Rev. 03 : January 28, 2006
RATING AND CHARACTERISTIC CURVES ( BAY80 )
FIG. 1 MAXIMUM PERMISSIBLE AVERAGE FORWARD
CURRENT VERSUS AMBIENT TEMPERATURE.
FIG. 2 TYPICAL FORWARD VOLTAGE
1000
500
Forward Current , IF (mA)
AVERAGE FORWARD CURRENT,
IF(AV) (mA)
Lead Length 10mm.
400
300
200
100
10
TJ = 25°C
1
100
0
0.1
0
100
200
0
0.4
1.0
0.8
1.2
1.4
Forward Voltage , VF (V)
Ambient Temperature , Ta (°C)
FIG. 3 TYPICAL DIODE CAPACITANCE AS
A FUNCTION OF REVERSE VOLTAGE
FIG. 4 TYPICAL REVERESE CURRENT
VERSUS JUNCTION TEMPERATURE
103
1.6
1.4
Reverse Current , IR (μA)
Diode Capacitance , Cd (pF)
VR = 120V
f = 1MHz;
TJ = 25°C
1.2
102
10
1
1.0
10-1
10-2
0.8
0
10
Reverse Voltage , VR (V)
Page 2 of 2
20
0
100
200
Junction Temperature , Ta (°C)
Rev. 03 : January 28, 2006