BC856BDW Series PNP Dual General Purpose Transistors P b Lead(Pb)-Free 2 3 1 6 5 1 4 5 2 4 3 6 SOT-363(SC-88) PNP+PNP Maximum Ratings Symbol BC856 BC857 BC858 Unit VCEO 65 45 30 V Collector-Base Voltage VCBO 80 50 30 V Emitter-Base Voltage VEBO IC 5.0 5.0 5.0 V 100 100 100 mA Rating Collector-Emitter Voltage Collector Current-Continuous Thermal Characteristics Characteristics Symbol Max PD 380 250 3.0 mW/ °C RθJA 328 °C/W Junction Temperature Range Tj +150 °C Storage Temperature Range Tstg -55 to +150 °C Total Device Dissipation Per Device FR-5 Board(1)TA = 25°C Derate Above 25°C Thermal Resistance, Junction to Ambient Unit mW Note : FR-5=1.0 x 0.75 x 0.062 inch Device Marking BC856BDW=3B , BC857BDW=3F , BC857CDW=3G , BC858BDW=3K , BC858CDW=3L WEITRON http://www.weitron.com.tw 1/6 14-Nov-07 BC856BDW Series Electrical Characteristics (TA=25°C Unless Otherwise noted) Characteristics Symbol Min Typ Max Unit BC856 BC857 BC858 V(BR)CEO -65 -45 -30 - - V BC856 BC857 BC858 V(BR)CES -80 -50 -30 - - V BC856 BC857 BC858 V(BR)CBO -80 -50 -30 - - V -5.0 -5.0 -5.0 - - - - -15 -4.0 - 150 270 - 220 420 290 520 450 800 - - -0.3 -0.65 V - -0.7 -0.9 - V Off Characteristics Collector-Emitter Breakdown Voltage IC=10mA Collector-Emitter Breakdown Voltage VEB=0V, IC=-10µA Emitter-Base Breakdown Voltage IC=-10µA Emitter-Base Breakdown Voltage IE=-1.0µA BC856 BC857 BC858 Collector Cutoff Current VCB=-30V VCB=-30V, TA=150°C V(BR)EBO ICBO V nA µA On Characteristics DC Current Gain VCE = –5.0V, IC = –10µA VCE = –5.0V, IC = –2.0mA BC856B, BC857B, BC858C BC857C, BC858C BC856B, BC857B, BC858C BC857C, BC858C hFE - Collector-Emitter Saturation Voltage IC = –10mA, IB = –0.5mA IC = –100mA, IB = –5.0mA VCE(sat) Base-Emitter Saturation Voltage IC = –10mA, IB = –0.5mA IC = –100mA, IB = –5.0mA VBE(sat) Base-Emitter Voltage VCE = –5.0V, IC = –2.0mA VCE = –5.0V, IC = –10mA VBE(on) -600 - - -750 -820 mV fT 100 - - MHz Cob - - 4.5 pF NF - - 10 dB Small-Signal Characteristics Current-Gain-Bandwidth Product VCE = –5.0V, IC = –10mA, f = 100MHz Output Capacitance VCB = –10V, f = 1.0kHz Noise Figure VCE = –5.0V, IC = –0.2mA, RS = 2.0kΩ, f = 1.0kHz, BW = 200Hz WEITRON http://www.weitron.com.tw 2/6 14-Nov-07 BC856BDW Series Electrical Characteristics ° ° Figure 2. “On” Voltage ° Figure 1. DC Current Gain θ ° θ ° ° Figure 3. Collector Saturation Region Figure 4. Base–Emitter Temperature Coefficient ° Figure 5. Capacitance WEITRON http://www.weitron.com.tw Figure 6. Current–Gain – Bandwidth Product 3/6 14-Nov-07 BC856BDW Series ° ° Figure 8. “Saturation” and “On” Voltages ° Figure 7. Normalized DC Current Gain ° ° θ ° Figure 9. Collector Saturation Region Figure 10. Base–Emitter Temperature Coefficient ° ° Figure 11. Capacitances WEITRON http://www.weitron.com.tw Figure 12. Current–Gain – Bandwidth Product 4/6 14-Nov-07 BC856BDW Series θ θ ° θ θ Figure 13. Thermal Response ° The safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. ° Figure 14. Active Region Safe Operating Area WEITRON http://www.weitron.com.tw 5/6 14-Nov-07 BC856BDW Series SOT-363 Package Outline Dimensions Unit:mm A 6 5 SOT-363 4 B C 1 2 D 3 E H K M L J Dim A B C D E H J K L M Min Max 0.10 0.30 1.15 1.35 2.00 2.20 0.65 REF 0.30 0.40 1.80 2.20 0.10 0.80 1.10 0.25 0.40 0.10 0.25 0.4 mm (min) 0.65 mm 0.65 mm 0.5 mm (min) 1.9 mm WEITRON http://www.weitron.com.tw 6/6 14-Nov-07