SECOS BC858A

BC856A, B
BC857A, B, C
BC858A, B, C
Elektronische Bauelemente
A suffix of "-C" specifies halogen & lead-free
FEATURES
SOT-23
n
General Purpose Transistor PNP Type
n
Collect current : - 0.1A
n
Operating Temp. : -55 C ~ +150 C
n
RoHS com pliant product
O
3
1
Top View
V
3
2
Dim
Min
Max
A
2.800
3.040
B
1.200
1.400
C
0.890
1.110
B S
2
G
3
1
B AS E
L
O
C OLLE C TOR
1
A
C
H
D
J
K
2
E MITTE R
D
0.370
0.500
G
1.780
2.040
H
0.013
0.100
J
0.085
0.177
K
0.450
0.600
L
0.890
1.020
S
2.100
2.500
V
0.450
0.600
All Dimension in mm
ELECTRICAL CHARACTERISTICS˄Tamb=25ć
unless
Symbol
Parameter
Collector-base breakdown voltage
otherwise
Test
specified˅
conditions
Collector-emitter breakdown voltage
VCBO
Ic= -10­Aˈ I E=0
-30
BC856
-65
VCEO
Ic= -10 mAˈ IB=0
VEBO
Collector cut-off current
BC856
Collector cut-off current
ICBO
VCB= -70 V ,
IE=0
VCB= -45 V ,
IE=0
VCB= -25 V ,
IE=0
BC856
VCE= -60 V ,
IB=0
BC857
ICEO
BC858
IEBO
Emitter cut-off current
DC current gain
IE= -10 ­Aˈ IC=0
BC858
BC857
VCE= -40 V ,
IB=0
VCE= -25 V ,
IB=0
V EB= -5 V ,
IC=0
BC856A,857A,858A
BC856B,857B,858B
-45
V
-30
BC858
Emitter-base breakdown voltage
UNIT
V
-50
BC858
BC857
MAX
-80
BC856
BC857
MIN
HFE˄1˅
VCE= -5V,
IC= -2mA
BC857C,BC858C
-5
V
-0.1
­A
-0.1
­A
-0.1
­A
125
250
220
475
420
800
Collector-emitter saturation voltage
VCE(sat)
IC=-100mA, IB= -5 mA
-0.5
V
Base-emitter saturation voltage
VBE(sat)
IC= -100 mA, IB= -5mA
-1.1
V
VCE= -5 V,
Transition frequency
fT
IC= -10mA
100
MHz
f=100MHz
DEVICE MARKING
BC856A=3A; BC856B=3B; BC857A=3E; BC857B=3F; BC857C=3G; BC858A=3J; BC858B=3K; BC858C=3L
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
Page 1 of 3
BC856A, B
BC857A, B, C
BC858A, B, C
Elektronische Bauelemente
Typical Characteristics
BC857, BC858
1.5
−1.0
TA = 25°C
−0.9
VCE = −10 V
TA = 25°C
VBE(sat) @ IC/IB = 10
−0.8
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
2.0
1.0
0.7
0.5
−0.7
VBE(on) @ VCE = −10 V
−0.6
−0.5
−0.4
−0.3
−0.2
0.3
VCE(sat) @ IC/IB = 10
−0.1
0.2
−0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
−50
IC, COLLECTOR CURRENT (mAdc)
0
−0.1 −0.2
−100 −200
1.0
−2.0
TA = 25°C
−1.6
−1.2
−0.8
IC =
−10 mA
IC = −50 mA
IC = −200 mA
IC = −100 mA
IC = −20 mA
−0.4
0
−0.02
−55°C to +125°C
1.2
1.6
2.0
2.4
2.8
−10 −20
−0.1
−1.0
IB, BASE CURRENT (mA)
−0.2
10
Cib
7.0
C, CAPACITANCE (pF)
TA = 25°C
5.0
Cob
3.0
2.0
1.0
−0.4 −0.6
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−1.0
−2.0
−4.0 −6.0
−10
−20 −30 −40
−10
−1.0
IC, COLLECTOR CURRENT (mA)
−100
Figure 4. Base-Emitter Temperature Coefficient
f,
T CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
Figure 3. Collector Saturation Region
01-Jun-2004 Rev. B
−100
−50
Figure 2. “Saturation” and “On” Voltages
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Normalized DC Current Gain
−0.5 −1.0 −2.0
−5.0 −10 −20
IC, COLLECTOR CURRENT (mAdc)
400
300
200
150
VCE = −10 V
TA = 25°C
100
80
60
40
30
20
−0.5
−1.0
−2.0 −3.0
−5.0
−10
−20
−30
−50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current-Gain - Bandwidth Product
Any changing of specification will not be informed individual
Page 2 of 3
BC856A, B
BC857A, B, C
BC858A, B, C
Elektronische Bauelemente
BC856
TJ = 25°C
VCE = −5.0 V
TA = 25°C
−0.8
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
−1.0
2.0
1.0
0.5
VBE(sat) @ IC/IB = 10
−0.6
VBE @ VCE = −5.0 V
−0.4
−0.2
0.2
VCE(sat) @ IC/IB = 10
0
−0.2
−1.0 −2.0 −5.0 −10 −20 −50 −100 −200
IC, COLLECTOR CURRENT (mA)
−0.1 −0.2
−0.5
−50 −100 −200
−5.0 −10 −20
−1.0 −2.0
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
−2.0
−1.6
IC =
−10 mA
−1.2
−20 mA
−50 mA
−100 mA −200 mA
−0.8
−0.4
TJ = 25°C
0
−0.02
−0.05 −0.1 −0.2
−0.5 −1.0 −2.0
IB, BASE CURRENT (mA)
−5.0
−10
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 7. DC Current Gain
−20
−1.0
−1.4
−1.8
−2.6
−3.0
−0.2
20
Cib
10
8.0
6.0
Cob
4.0
2.0
−0.1 −0.2
−0.5
−5.0 −10 −20
−1.0 −2.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
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01-Jun-2004 Rev.B
−50 −100
−0.5 −1.0
−50
−2.0
−5.0 −10 −20
IC, COLLECTOR CURRENT (mA)
−100 −200
Figure 10. Base-Emitter Temperature Coefficient
f,
T CURRENT−GAIN − BANDWIDTH PRODUCT
C, CAPACITANCE (pF)
TJ = 25°C
−55°C to 125°C
−2.2
Figure 9. Collector Saturation Region
40
θVB for VBE
500
VCE = −5.0 V
200
100
50
20
−100
−1.0
−10
IC, COLLECTOR CURRENT (mA)
Figure 12. Current-Gain - Bandwidth Product
Any changing of specification will not be informed individual
Page 3 of 3