BC856A, B BC857A, B, C BC858A, B, C Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 n General Purpose Transistor PNP Type n Collect current : - 0.1A n Operating Temp. : -55 C ~ +150 C n RoHS com pliant product O 3 1 Top View V 3 2 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 B S 2 G 3 1 B AS E L O C OLLE C TOR 1 A C H D J K 2 E MITTE R D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm ELECTRICAL CHARACTERISTICS˄Tamb=25ć unless Symbol Parameter Collector-base breakdown voltage otherwise Test specified˅ conditions Collector-emitter breakdown voltage VCBO Ic= -10Aˈ I E=0 -30 BC856 -65 VCEO Ic= -10 mAˈ IB=0 VEBO Collector cut-off current BC856 Collector cut-off current ICBO VCB= -70 V , IE=0 VCB= -45 V , IE=0 VCB= -25 V , IE=0 BC856 VCE= -60 V , IB=0 BC857 ICEO BC858 IEBO Emitter cut-off current DC current gain IE= -10 Aˈ IC=0 BC858 BC857 VCE= -40 V , IB=0 VCE= -25 V , IB=0 V EB= -5 V , IC=0 BC856A,857A,858A BC856B,857B,858B -45 V -30 BC858 Emitter-base breakdown voltage UNIT V -50 BC858 BC857 MAX -80 BC856 BC857 MIN HFE˄1˅ VCE= -5V, IC= -2mA BC857C,BC858C -5 V -0.1 A -0.1 A -0.1 A 125 250 220 475 420 800 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -5 mA -0.5 V Base-emitter saturation voltage VBE(sat) IC= -100 mA, IB= -5mA -1.1 V VCE= -5 V, Transition frequency fT IC= -10mA 100 MHz f=100MHz DEVICE MARKING BC856A=3A; BC856B=3B; BC857A=3E; BC857B=3F; BC857C=3G; BC858A=3J; BC858B=3K; BC858C=3L http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B Any changing of specification will not be informed individual Page 1 of 3 BC856A, B BC857A, B, C BC858A, B, C Elektronische Bauelemente Typical Characteristics BC857, BC858 1.5 −1.0 TA = 25°C −0.9 VCE = −10 V TA = 25°C VBE(sat) @ IC/IB = 10 −0.8 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 1.0 0.7 0.5 −0.7 VBE(on) @ VCE = −10 V −0.6 −0.5 −0.4 −0.3 −0.2 0.3 VCE(sat) @ IC/IB = 10 −0.1 0.2 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 IC, COLLECTOR CURRENT (mAdc) 0 −0.1 −0.2 −100 −200 1.0 −2.0 TA = 25°C −1.6 −1.2 −0.8 IC = −10 mA IC = −50 mA IC = −200 mA IC = −100 mA IC = −20 mA −0.4 0 −0.02 −55°C to +125°C 1.2 1.6 2.0 2.4 2.8 −10 −20 −0.1 −1.0 IB, BASE CURRENT (mA) −0.2 10 Cib 7.0 C, CAPACITANCE (pF) TA = 25°C 5.0 Cob 3.0 2.0 1.0 −0.4 −0.6 http://www.SeCoSGmbH.com −1.0 −2.0 −4.0 −6.0 −10 −20 −30 −40 −10 −1.0 IC, COLLECTOR CURRENT (mA) −100 Figure 4. Base-Emitter Temperature Coefficient f, T CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) Figure 3. Collector Saturation Region 01-Jun-2004 Rev. B −100 −50 Figure 2. “Saturation” and “On” Voltages θVB , TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Normalized DC Current Gain −0.5 −1.0 −2.0 −5.0 −10 −20 IC, COLLECTOR CURRENT (mAdc) 400 300 200 150 VCE = −10 V TA = 25°C 100 80 60 40 30 20 −0.5 −1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current-Gain - Bandwidth Product Any changing of specification will not be informed individual Page 2 of 3 BC856A, B BC857A, B, C BC858A, B, C Elektronische Bauelemente BC856 TJ = 25°C VCE = −5.0 V TA = 25°C −0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) −1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 −0.6 VBE @ VCE = −5.0 V −0.4 −0.2 0.2 VCE(sat) @ IC/IB = 10 0 −0.2 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) −0.1 −0.2 −0.5 −50 −100 −200 −5.0 −10 −20 −1.0 −2.0 IC, COLLECTOR CURRENT (mA) Figure 8. “On” Voltage −2.0 −1.6 IC = −10 mA −1.2 −20 mA −50 mA −100 mA −200 mA −0.8 −0.4 TJ = 25°C 0 −0.02 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 IB, BASE CURRENT (mA) −5.0 −10 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain −20 −1.0 −1.4 −1.8 −2.6 −3.0 −0.2 20 Cib 10 8.0 6.0 Cob 4.0 2.0 −0.1 −0.2 −0.5 −5.0 −10 −20 −1.0 −2.0 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance http://www.SeCoSGmbH.com 01-Jun-2004 Rev.B −50 −100 −0.5 −1.0 −50 −2.0 −5.0 −10 −20 IC, COLLECTOR CURRENT (mA) −100 −200 Figure 10. Base-Emitter Temperature Coefficient f, T CURRENT−GAIN − BANDWIDTH PRODUCT C, CAPACITANCE (pF) TJ = 25°C −55°C to 125°C −2.2 Figure 9. Collector Saturation Region 40 θVB for VBE 500 VCE = −5.0 V 200 100 50 20 −100 −1.0 −10 IC, COLLECTOR CURRENT (mA) Figure 12. Current-Gain - Bandwidth Product Any changing of specification will not be informed individual Page 3 of 3