Preliminary MCK22-8 SemiWell Semiconductor Sensitive Gate Silicon Controlled Rectifiers Symbol 3. Gate Features ▼ ○ ○ 2. Anode ○ 1. Cathode Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 1.5 A ) ◆ Low On-State Voltage (1.2V(Typ.)@ITM) ◆ SOT- 89 General Description Sensitive triggering SCR is suitable for the application where gate current limited such as small motor control, gate driver for large SCR, sensing and detecting circuits. 1 2 3 Absolute Maximum Ratings Symbol ( TJ = 25°C unless otherwise specified ) Parameter Condition Ratings Units 600 V VDRM Repetitive Peak Off-State Voltage IT(AV) Average On-State Current Half Sine Wave : TC =99 °C 1.0 A IT(RMS) R.M.S On-State Current All Conduction Angle 1.5 A ITSM Surge On-State Current 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive 15 A I2t for Fusing t = 8.3ms 0.9 A 2s Forward Peak Gate Power Dissipation TA=25°C, Pulse Width ≤ 1.0㎲ 0.5 W Forward Average Gate Power Dissipation TA=25°C, t = 8.3ms 0.1 W I2 t PGM PG(AV) IFGM Forward Peak Gate Current 0.2 A VRGM Reverse Peak Gate Voltage 5.0 V Operating Junction Temperature - 40 ~ 125 °C Storage Temperature - 40 ~ 150 °C TJ TSTG 1/5 Nov, 2003. Rev. 0 Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved. MCK22-8 Electrical Characteristics Symbol ( TC = 25 °C unless otherwise noted ) Items Ratings Conditions Min. Typ. Max. Unit IDRM Repetitive Peak Off-State Current VAK = VDRM or VRRM ; RGK = 1000 Ω TC = 25 °C TC = 125 °C ─ ─ ─ ─ 10 200 ㎂ VTM Peak On-State Voltage (1) ( ITM =3 A, Peak ) ─ 1.2 1.7 V IGT Gate Trigger Current (2) TC = 25 °C TC = - 40 °C ─ ─ ─ ─ 200 500 ㎂ VGT Gate Trigger Voltage (2) TC = 25 °C TC = - 40 °C ─ ─ ─ ─ 0.8 1.2 V VGD Non-Trigger Gate Voltage (1) 0.2 ─ ─ V dv/dt Critical Rate of Rise Off-State Voltage 200 ─ ─ V/㎲ di/dt Critical Rate of Rise On-State Current 50 A/㎲ VAK = 6 V, RL=100 Ω VD = 7 V, RL=100 Ω VAK = 12 V, RL=100 Ω TC = 125 °C VGM = 0.67VDRM, Exponential waveform , RGK = 1000 Ω TJ = 125 °C ITM = 3A, Ig = 10mA VAK = 12 V, Gate Open IH TC = 25 °C TC = - 40 °C Holding Current 2 ─ 5.0 10 mA Rth(j-c) Thermal Impedance Junction to case ─ ─ 15 °C/W Rth(j-a) Thermal Impedance Junction to Ambient ─ ─ 125 °C/W ※ Notes : 1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1% 2. Does not include RGK in measurement. 2/5 ─ ─ MCK22-8 Fig 1. Gate Characteristics Fig 2. Maximum Case Temperature Max. Allowable Case Temperature [ oC] 140 1 10 PGM (0.5W) PG(AV) (0.1W) 0 10 IGM (0.2A) Gate Voltage [V] VGM (5V) 25 ℃ VGD(0.2V) 120 θ = 180 80 60 -1 0 10 1 10 2 10 θ 0 0.0 10 : Conduction Angle 0.2 0.4 Transient Thermal Impedance Instantaneous On-State Current [A] 1.2 10 1 10 o TJ = 125 C 0 10 o TJ = 25 C -1 10 1 10 0 10 -2 0.4 0.8 1.2 1.6 2.0 2.4 -2 10 -1 10 Instantaneous On-State Voltage [V] 1 10 2 10 Fig 6. Typical Gate Trigger Current vs. Junction Temperature 1.2 1.5 0.9 o o IGT (t C) 2.0 IGT (25 C) 1.5 1.0 0.5 0.6 0.3 -50 0 10 Time (sec) Fig 5. Typical Gate Trigger Voltage vs. Junction Temperature o 1.0 2 2 10 VGT (t C) 0.8 Fig 4. Thermal Response Fig 3. Typical Forward Voltage VGT (25 oC) 0.6 Average On-State Current [A] Gate Current [mA] 10 2π 360° 20 3 10 π θ 40 -1 10 o 100 0 50 100 o Junction Temperature [ C] 150 0.0 -50 0 50 100 150 o Junction Temperature [ C] 3/5 MCK22-8 Fig 7. Typical Holding Current Fig 8. Power Dissipation 2.0 Max. Average Power Dissipation [W] 10 9 8 7 Holding Current [mA] 6 5 4 3 2 1 -40 -20 0 20 40 60 80 Junction Temperature [℃] 4/5 100 120 140 1.8 1.6 θ = 30 o θ = 60 o θ = 90 o θ = 120 o θ = 180 o 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.2 0.4 0.6 0.8 Average On-State Current [A] 1.0 1.2 MCK22-8 SOT- 89 Package Dimension Dim. A B B1 C C1 D D1 E e e1 H L R Min. 1.40 0.36 0.32 0.35 0.35 4.40 1.40 2.30 mm Typ. Max. 1.60 0.56 0.52 0.44 0.44 4.60 1.80 2.60 Inch Typ. Min. 0.055 0.014 0.013 0.014 0.014 0.173 0.055 0.091 1.50 2.90 3.94 0.90 Max. 0.063 0.022 0.020 0.017 0.017 0.181 0.071 0.102 0.060 3.10 4.25 1.10 0.114 0.155 0.035 0.122 0.167 0.043 0.25 0.010 1 2 3 1. Cathode 2. Anode 3. Gate 5/5