VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 320 5 2 1.5 2400 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 03D4501 Doc. No. 5SYA1106-02 Sep. 01 • Patented free-floating silicon technology • Low switching losses • Optimized to use as snubber and clamp diode in GTO and IGCT converters • Industry standard press-pack ceramic housing, hermetically cold-welded • Cosmic radiation withstand rating Blocking VRRM Repetitive peak reverse voltage IRRM Repetitive peak reverse current VDClink Permanent DC voltage for 100 FIT failure rate 2400 V 100% Duty VDClink Permanent DC voltage for 100 FIT failure rate 2800 V 5% Duty Mechanical data Fm a 4500 V ≤ Half sine wave, tP = 10 ms, f = 50 Hz 50 mA VR = VRRM, Tj = 125°C (see Fig. 8) Mounting force min. 10 kN max. 12 kN Acceleration: 50 m/s 2 Device clamped 200 m/s 2 m Weight 0.25 kg DS Surface creepage distance ≥ 30 mm Da Air strike distance ≥ 20 mm Device unclamped ABB Semiconductors AG reserves the right to change specifications without notice. Ambient cosmic radiation at sea level in open air. 5SDF 03D4501 On-state (see Fig. 2, 3) IFAVM Max. average on-state current 320 A IFRMS Max. RMS on-state current 500 A IFSM Max. peak non-repetitive 5 kA tp = 10 ms Before surge: 12 kA tp = 1 ms Tc = Tj = 125°C 2 125⋅103 A s tp = 10 ms 2 72⋅103 A s tp = 1 ms IF = surge current òI2dt Max. surge current integral Half sine wave, Tc = 85°C VF Forward voltage drop 3.5 V VF0 Threshold voltage 2 V rF Slope resistance 1.5 mΩ ≤ After surge: VR ≈ 0 V 1000 A Approximation for IF Tj = 125°C = 200…3000 A Turn-on (see Fig. 4, 5) Vfr Peak forward recovery voltage ≤ 140 V di/dt = 1000 A/µs, Tj = 125°C di/dt = 100 A/µs, Tj = 125 °C, IF = 2000 A, VRM = 4500 V, RS = 22 Ω, CS = 0.22 µF Turn-off (see Fig. 6, 7) Irr Reverse recovery current ≤ 200 A Qrr Reverse recovery charge ≤ 1000 µC Err Turn-off energy ≤ -- J Thermal (see Fig. 1) Tj Operating junction temperature range -40...125°C Tstg Storage temperature range -40...125°C RthJC Thermal resistance junction to case RthCH Thermal resistance case to heatsink ≤ 80 K/kW Anode side cooled ≤ 80 K/kW Cathode side cooled ≤ 40 K/kW Double side cooled ≤ 16 K/kW Single side cooled ≤ 8 K/kW Double side cooled Fm = 10… 12 kN Analytical function for transient thermal impedance. i n Z thJC (t) = å i =1 R i (1 - e - t /τ i ) 1 2 3 4 R i(K/kW) 20.95 10.57 7.15 1.33 τi(s) 0.396 0.072 0.009 0.0044 Fm = 10… 12 kN Double side cooled ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1106-02 Sep. 01 page 2 of 5 5SDF 03D4501 Fig. 1 Fig. 2 Transient thermal impedance (junction-to-case) vs. time in analytical and graphical form (max. values). Forward current vs. forward voltage (typ. and max. values) and linear approximation of max. curve at 125°C. Fig. 3 Surge current and fusing integral vs. pulse width (max. values) for non-repetitive, halfsinusoidal surge current pulses. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1106-02 Sep. 01 page 3 of 5 5SDF 03D4501 200 180 160 Vfr (V) 140 120 125°C 100 80 60 25°C 40 20 0 0 200 400 600 800 di/dt (A/µs) 1000 Fig. 4 Typical forward voltage waveform when the diode is turned on with a high di/dt. Fig. 5 Forward recovery voltage vs. turn-on di/dt (max. values). Fig. 6 Typical current and voltage waveforms at turn-off with conventional RC snubber circuit. Fig. 7 Reverse recovery current and reverse recovery charge vs. di/dt (max. values). ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1106-02 Sep. 01 page 4 of 5 5SDF 03D4501 Fig. 8 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)62 888 6419 +41 (0)62 888 6306 [email protected] www.abbsem.com Doc. No. 5SYA1106-02 Sep. 01