VRRM = 400 V IFAVM = 7110 A IFRMS = 11200 A IFSM = 55000 A VF0 = 0.74 V rF = 0.026 mΩ Rectifier Diode 5SDD 71X0400 Doc. No. 5SYA1158-01 July 06 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance Blocking VRRM Repetitive peak reverse voltage 400 V Half sine wave, tP = 10 ms, f = 50 Hz VRSM Maximum peak reverse voltage 450 V Half sine wave, tP = 10 ms IRRM Repetitive peak reverse current ≤ 50 mA Tj = 170 °C VR = VRRM Mechanical FM a Mounting force min. 20 kN max. 24 kN Acceleration: Device unclamped Device clamped 50 m/s2 200 m/s2 m Weight 0.14 kg DS Surface creepage distance 4 mm Da Air strike distance 4 mm Fig. 1 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SDD 71X0400 On-state 7110 A IFAVM Max. average on-state current IFRMS Max. RMS on-state current 11200 A IFSM Max. peak non-repetitive surge current 55000 A tp = 10 ms Before surge 60000 A tp = 8.3 ms Tj = 170 °C ∫I2dt Max. surge current integral Half sine wave, Tc = 85 °C 15100 kA2s tp = 10 ms 15000 kA2s tp = 8.3 ms VR ≈ 0V VF min Minimum on-state voltage ≥ 0.97 V VF max Maximum on-state voltage ≤ 1.02 V VF0 Threshold voltage rF Slope resistance 0.74 V 0.026 mΩ IF = After surge: 5000 A Tj = 25 °C Approximation for Tj = 170 °C IF = 5 - 15 kA Thermal characteristics Tj Operating junction temperature range -40...170 °C Tstg Storage temperature range -40…170 °C Thermal resistance junction to case ≤ 20 K/kW Anode side cooled ≤ 20 K/kW Cathode side cooled ≤ 10 K/kW Double side cooled ≤ 10 K/kW Single side cooled Rth(j-c) Rth(c-h) Thermal resistance case to heatsink ≤ 12 Fm = 20...24 kN Double Side Cooled 5 K/kW Double side cooled Z th ( j - c )(t) = ZthJC [K/kW] FM = 20…24 kN 4 ∑ R i (1 - e - t / τ i ) i =1 10 i 1 2 3 4 6 Ri (K/kW) 5.28 3.30 0.87 0.55 4 τi (s) 0.07 0.039 0.0034 0.00013 5SDD 71X0400 8 2 0 10-3 10-2 10-1 t [s] 10 FM = 20… 24 kN Double side cooled 0 Fig. 2 Transient thermal impedance (junction-to-case) vs. time in analytical and graphical forms. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. page 2 of 4 Doc. No. 5SYA1158-01 July 06 5SDD 71X0400 On-state characteristics Surge current characteristics IF [A] IFSM [kA] 20000 ∫ i2dt [MA2s] 5SDD 71X0400 22 100 18000 Tj = 170°C Tj = 170°C 20 90 16000 IFSM 14000 80 18 70 16 60 14 max. min. 12000 10000 8000 6000 5SDD 71X0400 4000 2000 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ∫i2t 50 12 40 10 0 1.6 1 10 2 10 10 VF [V] Fig. 3 t [ms] Fig. 4 Surge current and fusing integral vs. pulse width (max. values) for non-repetitive, halfsinusoidal surge current pulses. Forward current vs. forward voltage (min. and max. values). Current load capability I D ( kA ) ID vs. ED, 1000 Hz square wave, TC = 100 °C 16 n n n n 15 = 50 = 100 = 500 = 1000 pulses pulses pulses pulses 14 13 5SDD 71X0400 12 11 10 1 Fig. 5 10 Duty cycle ED (%) 100 DC-output current with single-phase centre tap ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. page 3 of 4 Doc. No. 5SYA1158-01 July 06 5SDD 71X0400 Current load capacity, cont. ID ( k A ) ID vs. ED, 1000 Hz square-wave, Th = 60 °C 22 n n n n 20 = 50 = 100 = 500 = 1000 pulses pulses pulses pulses 18 16 5SDD 71X0400 14 12 10 1 Fig. 6 10 Duty cycle ED (%) 100 DC-output current with single-phase centre tap ID - Fig. 7 Definition of ED for typical welding sequence + Fig. 8 Definition of ID for single-phase centre tap ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1158-01 July 06