VRRM = 400 V IFAVM = 11350 A IFRMS = 17800 A IFSM = 85000 A VF0 = 0.74 V rF = 0.018 mΩ Rectifier Diode 5SDD 0120C0400 Doc. No. 5SYA1159-01 July 06 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance Blocking VRRM Repetitive peak reverse voltage 400 V Half sine wave, tP = 10 ms, f = 50 Hz VRSM Maximum peak reverse voltage 450 V Half sine wave, tP = 10 ms IRRM Repetitive peak reverse current ≤ 50 mA Tj = 170 °C Mechanical FM a Mounting force min. 35 kN max. 40 kN Acceleration: Device unclamped Device clamped 50 m/s2 200 m/s2 m Weight 0.22 kg DS Surface creepage distance 4 mm Da Air strike distance 4 mm Fig. 1 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Semiconductors AG reserves the right to change specifications without notice. VR = VRRM 5SDD 0120C0400 On-state IFAVM Max. average on-state current 11350 A IFRMS Max. RMS on-state current 17800 A IFSM Max. peak non-repetitive surge current 85000 A tp = 10 ms Before surge 92500 A tp = 8.3 ms Tj = 170 °C ∫I2dt Max. surge current integral Half sine wave, Tc = 85 °C 36100 kA2s tp = 10 ms 35700 kA2s tp = 8.3 ms VR ≈ 0V VF min Minimum on-state voltage ≥ 0.83 V VF max Maximum on-state voltage ≤ 0.88 V VF0 Threshold voltage rF Slope resistance 0.74 V 0.018 mΩ IF = After surge: 8000 A Tj = 170 °C Approximation for Tj = 170 °C IF = 8 - 18 kA Thermal characteristics Tj Operating junction temperature range -40...170 °C Tstg Storage temperature range -40…170 °C Thermal resistance junction to case ≤ 12 K/kW Anode side cooled ≤ 12 K/kW Cathode side cooled ≤ 6 K/kW Double side cooled ≤ 6 K/kW Single side cooled ≤ 3 K/kW Double side cooled Rth(j-c) Rth(c-h) Thermal resistance case to heatsink Z th ( j - c )(t) = ZthJC [K/kW] 8 Double sided cooling Fm = 35...40 kN ∑ R i (1 - e - t / τ i ) i =1 6 5SDD 0120C0400 4 2 0 10-3 4 FM = 35…40 kN 10-2 10-1 i 1 2 3 4 Ri (K/kW) 3.37 1.50 0.63 0.67 τi (s) 0.095 0.048 0.0035 0.001 FM = 35…40 kN Double side cooled 0 t [s] 10 Fig. 2 Transient thermal impedance (junction-to-case) vs. time in analytical and graphical forms. ABB Semiconductors AG reserves the right to change specifications without notice. page 2 of 4 Doc. No. 5SYA1159-01 July 06 5SDD 0120C0400 On-state characteristics Surge current characteristics IF [A] IFSM [kA] 18000 ∫ i2dt [MA2s] 5SDD 0120C0400 140 44 Tj = 170°C 16000 ∫i2t IFSM 120 14000 min. 12000 40 max. Tj = 170°C 100 36 80 32 60 28 10000 8000 6000 5SDD 0120C0400 4000 2000 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 40 24 0 1.6 1 10 2 10 10 VF [V] Fig. 3 t [ms] Fig. 4 Surge current and fusing integral vs. pulse width (max. values) for non-repetitive, halfsinusoidal surge current pulses. Forward current vs. forward voltage (min. and max. values). Current load capability I D ( kA ) ID vs. ED, 1000 Hz square wave, TC = 100 °C 28 n n n n 26 = 50 = 100 = 500 = 1000 pulses pulses pulses pulses 24 22 5SDD 0120C0400 20 18 16 1 Fig. 5 10 Duty cycle ED (%) 100 DC-output current with single-phase centre tap ABB Semiconductors AG reserves the right to change specifications without notice. page 3 of 4 Doc. No. 5SYA1159-01 July 06 5SDD 0120C0400 Current load capacity, cont. ID ( k A ) ID vs. ED, 1000 Hz square-wave, Th = 60 °C 36 n n n n 34 32 30 = 50 = 100 = 500 = 1000 pulses pulses pulses pulses 28 26 24 5SDD 0120C0400 22 20 18 16 1 Fig. 6 10 Duty cycle ED (%) 100 DC-output current with single-phase centre tap ID - Fig. 7 Definition of ED for typical welding sequence + Fig. 8 Definition of ID for single-phase centre tap ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)62 888 6419 Fax +41 (0)62 888 6306 Email [email protected] Internet www.abbsem.com Doc. No. 5SYA1159-01 July 06