APT10030L2VR
1000V 33A
0.300Ω
POWER MOS V® MOSFET
TO-264
Max
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• TO-264 MAX Package
• Avalanche Energy Rated
D
• Faster Switching
G
• Lower Leakage
S
MAXIMUM RATINGS
Symbol
VDSS
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT10030L2VR
UNIT
1000
Volts
Drain-Source Voltage
ID
Continuous Drain Current @ TC = 25°C
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
833
Watts
Linear Derating Factor
6.66
W/°C
PD
TJ,TSTG
1
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
1
Amps
132
TL
EAS
33
-55 to 150
°C
300
Amps
33
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
50
4
mJ
3200
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
1000
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 16.5A)
TYP
MAX
Volts
0.300
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C)
250
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
Ohms
µA
±100
nA
4
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
5-2004
Characteristic / Test Conditions
050-5990 Rev B
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT10030L2VR
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
1000
Crss
Reverse Transfer Capacitance
f = 1 MHz
500
VGS = 10V
585
VDD = 500V
55
ID = 33A @ 25°C
265
Qg
Total Gate Charge
Qgs
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
VGS = 15V
14
Rise Time
VDD = 500V
16
ID = 33A @ 25°C
75
RG = 0.6Ω
14
td(off)
Turn-off Delay Time
tf
Fall Time
UNIT
10600
Qgd
tr
MAX
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -33A, dl S /dt = 100A/µs)
Q rr
Reverse Recovery Charge (IS = -33A, dl S /dt = 100A/µs)
dv/
Peak Diode Recovery
dv/
MAX
33
IS
dt
TYP
132
(Body Diode)
1.3
(VGS = 0V, IS = -33A)
dt
UNIT
Amps
Volts
1150
ns
31
µC
10
V/ns
MAX
UNIT
5
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.15
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 5.88mH, RG = 25Ω, Peak IL = 33A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID33A di/dt ≤ 700A/µs VR ≤ 1000V TJ ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.12
0.7
0.10
0.08
0.5
Note:
0.06
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5990 Rev B
5-2004
0.16
0.14
0.3
0.04
0
t1
t2
0.02
0.1
10-5
Duty Factor D = t1/t2
SINGLE PULSE
0.05
10-4
10-3
°C/W
Peak TJ = PDM x ZθJC + TC
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT10030L2VR
RC MODEL
Junction
temp. (°C)
0.0545
0.0487F
Power
(watts)
0.0957
0.922F
Case temperature. (°C)
ID, DRAIN CURRENT (AMPERES)
80
VGS =15, 10, 6.5 & 6V
70
5.5V
60
50
5V
40
30
4.5V
20
10
4V
0
80
60
TJ = -55°C
40
TJ = +25°C
20
0
TJ = +125°C
0
1
2
3
4
5
6
7
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
30
25
20
15
10
5
0
25
1.30
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
I
D
V
1.05
1.00
0.95
0.90
0.85
= 10V
2.0
1.5
1.0
0.5
0.0
-50
1.10
1.2
= 16.5A
GS
10
20
30
40
50
60
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
NORMALIZED TO
= 10V @ 16.5A
GS
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
35
V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
5-2004
100
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
050-5990 Rev B
ID, DRAIN CURRENT (AMPERES)
120
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
100µS
10
1mS
5
TC =+25°C
TJ =+150°C
SINGLE PULSE
D
Coss
Crss
100
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
= 33A
12
VDS = 200V
8
VDS = 500V
1,000
10mS
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I
Ciss
10,000
C, CAPACITANCE (pF)
50
1
APT10030L2VR
30,000
OPERATION HERE
LIMITED BY RDS (ON)
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
132
VDS = 800V
4
0
0
100 200 300 400 500 600 700 800
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-264 MAXTM(L2) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
Drain
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
050-5990 Rev B
5-2004
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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