APT1201R5BVFR
APT1201R5SVFR
1.500Ω
Ω
1200V 10A
POWER MOS V ®
TO-247
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• Faster Switching
• Avalanche Energy Rated
• Lower Leakage
• Popular TO-247 Package
D
G
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT1201R5BVFR_SVFR
UNIT
1200
Volts
Drain-Source Voltage
10
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
370
Watts
Linear Derating Factor
2.96
W/°C
PD
TJ,TSTG
1
40
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
10
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
30
4
mJ
1300
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
1200
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 5A)
TYP
MAX
UNIT
Volts
1.500
Ohms
Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
3-2004
Characteristic / Test Conditions
050-5843 Rev A
Symbol
DYNAMIC CHARACTERISTICS
APT1201R5BVFR_SVFR
Characteristic
Symbol
Test Conditions
MIN
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
3700
4440
Coss
Output Capacitance
VDS = 25V
320
450
Reverse Transfer Capacitance
f = 1 MHz
150
225
VGS = 10V
190
285
VDD = 600V
ID = 10A @ 25°C
16
90
24
135
VGS = 15V
12
24
Crss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
t d(on)
3
Turn-on Delay Time
tr
Rise Time
t d(off)
Turn-off Delay Time
tf
Fall Time
VDD = 600V
10
20
ID = 10A @ 25°C
50
75
RG = 1.6Ω
14
28
TYP
MAX
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
10
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
(Body Diode)
40
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -ID 10A)
1.3
Volts
18
V/ns
dv/
Peak Diode Recovery
dt
dv/
dt
5
t rr
Reverse Recovery Time
(IS = -ID 10A, di/dt = 100A/µs)
Tj = 25°C
250
Tj = 125°C
430
Q rr
Reverse Recovery Charge
(IS = -ID 10A, di/dt = 100A/µs)
Tj = 25°C
1.0
Tj = 125°C
2.5
IRRM
Peak Recovery Current
(IS = -ID 10A, di/dt = 100A/µs)
Tj = 25°C
11
Tj = 125°C
17
Amps
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
MAX
0.34
40
1 Repetitive Rating: Pulse width limited by maximum junction
UNIT
°C/W
3 See MIL-STD-750 Method 3471
4 SStarting T = +25°C, L = 26mH, R = 25Ω, Peak I = 10A
j
G
L
5 I ≤ I 10A, di/ = 100A/µs, T ≤ 150°C, R = 2.0Ω V = 1200V.
S
D
j
G
R
dt
APT Reserves the right to change, without notice, the specifications and information contained herein.
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
D=0.5
0.1
0.2
0.05
0.1
0.05
0.01
0.005
Note:
0.02
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5843 Rev A
3-2004
0.4
0.01
t1
t2
SINGLE PULSE
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
VGS=5.5V, 6V, 7V, 10V &15V
5V
16
12
4.5V
8
4
4V
16
TJ = +125°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
12
8
TJ = +125°C
4
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
8
6
4
2
0
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
25
4
4V
1.4
V
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
1.3
1.2
VGS=10V
VGS=20V
1.1
1.0
0.9
0
5
10
15
20
25
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-50
1.2
2.5
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
4.5V
8
1.1
1.0
0.9
0.8
3-2004
ID, DRAIN CURRENT (AMPERES)
10
12
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5843 Rev A
ID, DRAIN CURRENT (AMPERES)
TJ = +25°C
5V
16
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
100
200
300
400
500
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
TJ = -55°C
VGS=5.5V, 6V, 7V, 10V &15V
0
0
20
APT1201R5BVFR_SVFR
20
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
20
OPERATION HERE
LIMITED BY RDS (ON)
10,000
100µS
10
1mS
5
10mS
1
0.5
100mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
50
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
500
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
D
VDS=120V
VDS=240V
12
VDS=600V
8
4
0
Coss
100
I = I [Cont.]
16
1,000
Crss
1
5 10
50 100
500 1200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
Ciss
5,000
DC
0.1
20
APT1201R5BVFR_SVFR
15,000
10µS
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
50
0
50 100 150 200 250 300 350
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
TJ =+150°C
5
1
.5
.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
3
TO-247 Package Outline
D PAK Package Outline
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
Drain
TJ =+25°C
10
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
4.50 (.177) Max.
3-2004
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022) {3 Plcs}
050-5843 Rev A
13.41 (.528)
13.51 (.532)
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated