APT14050JVFR
23A 0.500Ω
Ω
1400V
POWER MOS V ®
S
S
FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
27
2
T-
D
G
SO
"UL Recognized"
ISOTOP ®
• Fast Recovery Body Diode
• Avalanche Energy Rated
• Lower Leakage
• Popular SOT-227 Package
D
G
• Faster Switching
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT14050JVFR
UNIT
1400
Volts
Drain-Source Voltage
23
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
694
Watts
Linear Derating Factor
5.56
W/°C
PD
TJ,TSTG
92
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
Volts
-55 to 150
°C
300
Amps
23
(Repetitive and Non-Repetitive)
1
50
4
mJ
3600
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
1400
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 11.5A)
TYP
MAX
UNIT
Volts
0.500
Ohms
Zero Gate Voltage Drain Current (VDS = 1400V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 1120V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
4-2004
Characteristic / Test Conditions
050-7259 Rev A
Symbol
APT14050JVFR
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
VGS = 0V
13500
Coss
Output Capacitance
VDS = 25V
1150
Reverse Transfer Capacitance
f = 1 MHz
600
VGS = 10V
820
VDD = 700V
ID = 23A @ 25°C
55
375
VGS = 15V
20
Crss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
t d(on)
3
Turn-on Delay Time
tr
VDD = 700V
18
ID = 23A @ 25°C
110
RG = 0.6Ω
20
Rise Time
t d(off)
Turn-off Delay Time
tf
Fall Time
MAX
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
23
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
(Body Diode)
92
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = ID -23A)
1.3
Volts
18
V/ns
dv/
Peak Diode Recovery
dt
dv/
dt
5
t rr
Reverse Recovery Time
(IS = -ID 23A, di/dt = 100A/µs)
Tj = 25°C
300
Tj = 125°C
600
Q rr
Reverse Recovery Charge
(IS = -ID 23A, di/dt = 100A/µs)
Tj = 25°C
1.8
Tj = 125°C
7.4
IRRM
Peak Recovery Current
(IS = -ID 23A, di/dt = 100A/µs)
Tj = 25°C
16
Tj = 125°C
30
Amps
ns
µC
Amps
THERMAL/ PACKAGE CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
MAX
0.18
40
VIsolation
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Torque
Maximum Torque for Device Mounting Screws and Electrical Terminations.
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
2500
10
0.7
0.12
0.5
Note:
0.08
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
4-2004
050-7259 Rev A
0.9
0.3
0
t1
t2
0.04
0.1
10-5
SINGLE PULSE
10-4
lb•in
4 Starting Tj = +25°C, L = 13.61mH, RG = 25Ω, Peak IL = 23A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID23A di/dt ≤ 700A/µs VR ≤ 1400 TJ ≤ 150°C
0.20
0.05
°C/W
Volts
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.16
UNIT
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
APT14050JVFR
60
Junction
temp. (°C)
0.0262
Power
(watts)
0.133
0.0219
0.0330F
0.760F
36.6F
ID, DRAIN CURRENT (AMPERES)
VGS =15 & 10V
RC MODEL
Case temperature. (°C)
80
60
TJ = -55°C
TJ = +25°C
TJ = +125°C
20
0
1
2
3
4
5
6
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
4.5V
10
4V
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
V
15
10
5
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
1.30
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
D
2.5
1.10
1.05
1.00
0.95
0.90
= 11.5A
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
10
20
30
40
50
60
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
I
V
NORMALIZED TO
= 10V @ 11.5A
GS
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
4-2004
ID, DRAIN CURRENT (AMPERES)
20
0
25
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
20
1.15
25
3.0
30
050-7259 Rev A
0
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
40
5V
40
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
100
50
50
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Ciss
C, CAPACITANCE (pF)
100µS
10
5
1
1mS
100
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
= 23A
12
VDS= 280V
8
Coss
1,000
Crss
1
10
100
500 1400
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
D
10,000
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
I
APT14050JVFR
60,000
OPERATION HERE
LIMITED BY RDS (ON)
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
92
VDS= 700V
VDS= 1000V
4
0
0
200
400
600
800
1000
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.7
1.1
1.5
1.9
2.3
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
4-2004
050-7259 Rev A
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.