APT6045BVR
APT6045SVR
APT6045BVRG APT6045SVRG
600V
0.45 Ω
15A
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS V
BVR
®
TO
-2
47
D3PAK
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS
V® also achieves faster switching speeds through optimized gate layout.
• Faster Switching
• Avalanche Energy Rated
• Lower Leakage
• Popular TO-247 Package
SVR
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
VDSS
ID
Parameter
APT6045B_SVR(G)
UNIT
600
Volts
Drain-Source Voltage
15
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
250
Watts
2
W/°C
VGSM
PD
TJ,TSTG
1
60
Linear Derating Factor
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
Volts
°C
300
15
(Repetitive and Non-Repetitive)
Amps
30
1
4
mJ
960
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
On State Drain Current
2
(VDS > I D(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
MAX
Volts
15
Amps
0.45
25
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Ohms
μA
±100
nA
4
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
UNIT
600
(VGS = 10V, 7.5A)
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
TYP
050-7205 Rev A 1-2010
Symbol Characteristic / Test Conditions
DYNAMIC CHARACTERISTICS
Symbol
APT6045B_SVR(G)
Test Conditions
Characteristic
MIN
TYP
MAX
Ciss
Input Capacitance
2600
3120
Coss
VGS = 0V
Output Capacitance
305
425
Crss
Reverse Transfer Capacitance
VDS = 25V
f = 1 MHz
125
180
VGS = 10V
115
170
Qg
Total Gate Charge
Qgs
Gate-Source Charge
3
VDD = 300V
15
25
ID = 15A @ 25°C
52
75
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
VGS = 15V
10
20
Rise Time
VDD = 300V
9
18
ID = 15A @ 25°C
38
50
RG = 1.6Ω
6
12
TYP
MAX
tr
td(off)
Turn-off Delay Time
tf
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
MIN
Characteristic / Test Conditions
15
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
(Body Diode)
60
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -15A)
1.3
400
t rr
Reverse Recovery Time (IS = -15A, dl S/dt = 100A/μs)
Q rr
Reverse Recovery Charge (IS = -15A, dl S/dt = 100A/μs)
UNIT
Amps
Volts
ns
6
μC
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
MAX
0.50
40
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
3
4
See MIL-STD-750 Method 3471
Starting Tj = +25°C, L = 8.50mH, RG = 25Ω, Peak IL = 15A
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
0.5
0.1
0.05
0.2
0.1
0.05
0.02
0.01
0.005
Note:
0.01
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7205 Rev A 1-2010
D=0.5
SINGLE PULSE
t1
t2
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
UNIT
°C/W
APT6045B_SVR(G)
30
VGS=6V, 7V, 10V & 15V
24
5.5V
18
5V
12
6
4.5V
ID, DRAIN CURRENT (AMPERES)
4V
00
50
100
150
200
250
300
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
24
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
18
12
TJ = +125°C
6
TJ = +25°C
TJ = -55°C
00
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
12
8
4
0 25
5.5V
18
5V
12
6
4.5V
4V
1.5
NORMALIZED TO
V
GS
1.4
= 10V @ 7.5A
1.3
1.2
VGS=10V
1.1
VGS=20V
1.0
0.9
0
6
12
18
24
30
36
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-50
1.2
I = 7.5A
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
VGS=7V, 10V
24
0
5
10
15
20
25
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
16
6V
0
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
30
VGS=15V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7205 Rev A 1-2010
ID, DRAIN CURRENT (AMPERES)
30
APT6045B_SVR(G)
10,000
10μS
50
OPERATION HERE
LIMITED BY R
(ON)
DS
5,000
100μS
10
Ciss
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
100
1mS
5
10mS
1
100mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
0.5
50
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Crss
100
1
5 10
50 100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = 7.5A
D
VDS=120V
VDS=300V
12
VDS=480V
8
4
0
Coss
500
DC
0.1
16
1,000
0
50
100
150
200
250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
50
TJ =+150°C
10
TJ =+25°C
5
1
.5
.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
D3PAK Package Outline
TO-247 (B) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
Drain
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
15.49 (.610)
16.26 (.640)
(Heat Sink)
e3 100% Sn Plated
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
13.41 (.528)
13.51(.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022) {3 Plcs}
4.50 (.177) Max.
050-7205 Rev A 1-2010
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drain
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Collector)
5.45 (.215) BSC
{2 Plcs.}
and Leads
are Plated
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.