APT8024B2VFR
APT8024LVFR
800V 33A
POWER MOS V® FREDFET
0.240Ω
B2VFR
T-MAX™
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
TO-264
LVFR
• T-MAX™ or TO-264 Package
• Avalanche Energy Rated
• Faster Switching
• FAST RECOVERY BODY DIODE
D
G
• Lower Leakage
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT8024B2VFR_LVFR
UNIT
800
Volts
Drain-Source Voltage
33
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
625
Watts
Linear Derating Factor
5.00
W/°C
PD
TJ,TSTG
1
132
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
33
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 16.5A)
TYP
MAX
UNIT
Volts
0.240
Ohms
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
5-2004
Characteristic / Test Conditions
050-5907 Rev B
Symbol
APT8024B2VFR_LVFR
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
MIN
Test Conditions
TYP
Ciss
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
830
Reverse Transfer Capacitance
f = 1 MHz
470
Crss
Qg
Total Gate Charge
Qgs
3
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
MAX
UNIT
7740
VGS = 10V
425
VDD = 400V
38
ID = 33A @ 25°C
240
VGS = 15V
18
VDD = 400V
15
ID = 33A @ 25°C
65
RG = 0.6Ω
9
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
Characteristic / Test Conditions
MIN
TYP
MAX
33
Continuous Source Current (Body Diode)
UNIT
Amps
Pulsed Source Current
1
(Body Diode)
132
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -33A)
1.3
Volts
dv/
Peak Diode Recovery
18
V/ns
dt
dv/
dt
5
t rr
Reverse Recovery Time
(IS = -33A, di/dt = 100A/µs)
Tj = 25°C
320
Tj = 125°C
650
Q rr
Reverse Recovery Charge
(IS = -33A, di/dt = 100A/µs)
Tj = 25°C
2.2
Tj = 125°C
7.5
IRRM
Peak Recovery Current
(IS = -33A, di/dt = 100A/µs)
Tj = 25°C
14
Tj = 125°C
24
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.20
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.7
Note:
0.5
0.10
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5907 Rev B
5-2004
0.25
0.15
0.3
t2
0.1
0
SINGLE PULSE
0.05
10-5
t1
Duty Factor D = t1/t2
0.05
10-4
°C/W
4 Starting Tj = +25°C, L = 5.51mH, RG = 25Ω, Peak IL = 33A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID33A di/dt ≤ 700A/µs VR ≤800V TJ ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.20
UNIT
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
0.0302
Power
(watts)
0.00809F
0.0729
0.0182F
0.0955
0.264F
Case temperature. (°C)
6V
50
40
5.5V
30
20
5V
10
4.5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
100
1.40
60
40
TJ = +125°C
20
TJ = +25°C
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
V
1.30
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
35
30
25
20
15
10
5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
I
D
20
30
40
50
60
70
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
= 16.5A
= 10V
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
GS
2.0
1.5
1.0
0.5
0.0
-50
10
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
2.5
V
NORMALIZED TO
= 10V @ 16.5A
GS
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.1
1.0
0.9
0.8
5-2004
0
0
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5907 Rev B
0
TJ = -55°C
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
60
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
80
ID, DRAIN CURRENT (AMPERES)
7V
6.5V
70
0
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
VGS =15 &10 V
80
RC MODEL
ID, DRAIN CURRENT (AMPERES)
Junction
temp. (°C)
APT8024B2VFR_LVFR
90
10,000
50
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
100µS
10
5
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
I
D
12
= 33A
VDS=400V
VDS=640V
4
0
Crss
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
VDS=160V
8
0
100 200 300 400 500 600 700
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
T-MAXTM (B2) Package Outline (B2VFR)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
Coss
100
IDR, REVERSE DRAIN CURRENT (AMPERES)
16
Ciss
1,000
10mS
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
APT8024B2VFR_LVFR
30,000
132
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-264 (L) Package Outline (LVFR)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
Drain
Drain
20.80 (.819)
21.46 (.845)
050-5907 Rev B
5-2004
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Gate
Drain
Source
Source
2.21 (.087)
2.59 (.102)
2.29 (.090)
2.69 (.106)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.