APT5513JFLL
550V 35A 0.130Ω
POWER MOS 7
R
FREDFET
S
S
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
SO
"UL Recognized"
ISOTOP ®
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
27
2
T-
D
G
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
APT5513JFLL
UNIT
550
Volts
35
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
379
Watts
Linear Derating Factor
3.03
W/°C
VGSM
PD
TJ,TSTG
140
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
35
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
35
4
mJ
1600
STATIC ELECTRICAL CHARACTERISTICS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
550
Volts
35
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 17.5A)
TYP
MAX
0.130
Zero Gate Voltage Drain Current (VDS = 550V, VGS = 0V)
250
UNIT
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 440V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
3-2003
BVDSS
Characteristic / Test Conditions
050-7195 Rev A
Symbol
APT5513JFLL
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Ciss
Coss
Crss
Input Capacitance
VGS = 0V
Output Capacitance
VDS = 25V
Qg
3
Total Gate Charge
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
ID = 41A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
Rise Time
td(off)
VDD = 275V
Turn-off Delay Time
tf
ID = 41A @ 25°C
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
ns
517
VDD = 367V, VGS = 15V
Eon
nC
5
RG = 0.6Ω
Eon
UNIT
pF
60
98
25
55
14
11
30
VGS = 10V
Qgd
MAX
4268
838
VDD = 275V
Gate-Source Charge
tr
TYP
f = 1 MHz
Reverse Transfer Capacitance
Qgs
MIN
Test Conditions
ID = 41A, RG = 5Ω
431
INDUCTIVE SWITCHING @ 125°C
796
VDD = 367V VGS = 15V
ID = 41A, RG = 5Ω
µJ
501
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
dv/
Characteristic / Test Conditions
MIN
TYP
35
Continuous Source Current (Body Diode)
Amps
Pulsed Source Current
(Body Diode)
140
Diode Forward Voltage
2
(VGS = 0V, IS = -35A)
1.3
Volts
15
V/ns
dv/
dt
5
Reverse Recovery Time
(IS = -35A, di/dt = 100A/µs)
Tj = 25°C
250
Tj = 125°C
515
Q rr
Reverse Recovery Charge
(IS = -35A, di/dt = 100A/µs)
Tj = 25°C
2.16
Tj = 125°C
5.57
IRRM
Peak Recovery Current
(IS = -35A, di/dt = 100A/µs)
Tj = 25°C
15.5
Tj = 125°C
22.4
t rr
UNIT
1
Peak Diode Recovery
dt
MAX
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.33
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.7
0.20
0.5
Note:
0.15
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7195 Rev A
3-2003
0.35
0.25
0.3
0.10
Duty Factor D = t1/t2
0.1
Peak TJ = PDM x ZθJC + TC
0.05
0
t1
t2
0.05
10-5
SINGLE PULSE
10-4
°C/W
4 Starting Tj = +25°C, L = 2.61mH, RG = 25Ω, Peak IL = 35A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID35A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
30
UNIT
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT5513JFLL
120
Junction
temp. ( ”C)
0.0988
0.0196F
Power
(Watts)
0.230
0.381F
Case temperature
ID, DRAIN CURRENT (AMPERES)
VGS =15 & 10V
RC MODEL
7.5V
100
7V
80
6.5V
60
6V
40
5.5V
20
5V
80
60
40
TJ = +125°C
20
0
TJ = -55°C
TJ = +25°C
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
30
25
20
15
10
5
0
25
1.30
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
20
40
60
80
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
I
= 20.5A
V
= 10V
D
GS
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
0.0
-50
NORMALIZED TO
= 10V @ 20.5A
GS
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
35
V
1.1
1.0
0.9
0.8
3-2003
100
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7195 Rev A
ID, DRAIN CURRENT (AMPERES)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
120
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
APT5513JFLL
20,000
OPERATION HERE
LIMITED BY RDS (ON)
10,000
Ciss
100µS
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
140
100
= 41A
VDS=110V
VDS=275V
VDS=440V
8
4
0
Crss
0
40
80
120
160
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
12
100
10
1
10
100
550
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
Coss
10mS
1
I
1,000
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
80
100
V
DD
R
G
td(off)
80
J
DD
R
G
L = 100µH
= 367V
tr and tf (ns)
td(on) and td(off) (ns)
V
tf
T = 125°C
60
60
= 367V
= 5Ω
= 5Ω
T = 125°C
J
L = 100µH
40
40
20
20
tr
td(on)
0
0
5
15
25
35
45
55
65
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
5
35
45
55
65
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2500
1600
V
DD
R
G
= 367V
Eon
L = 100µH
E ON includes
diode reverse recovery.
800
400
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
3-2003
J
050-7195 Rev A
25
= 5Ω
T = 125°C
1200
15
2000
Eoff
1500
Eon
1000
V
I
DD
D
= 367V
= 41A
T = 125°C
J
500
L = 100µH
E ON includes
Eoff
diode reverse recovery.
0
0
5
15
25
35
45
55
65
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT5513JFLL
Gate Voltage
10 %
90%
Gate Voltage
T = 125 C
J
T = 125 C
J
td(off)
td(on)
Drain Voltage
90%
Drain Current
90%
tr
tf
5%
10%
5%
10 %
0
Drain Voltage
Drain Current
Switching Energy
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF60B
V DD
IC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3-2003
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7195 Rev A
7.8 (.307)
8.2 (.322)