APTGF50X60RTP3 APTGF50X60BTP3 Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module VCES = 600V IC = 50A @ Tc = 80°C Application • AC Motor control Features Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Very low stray inductance High level of integration Internal thermistor for temperature monitoring • • • • Benefits APTGF50X60RTP3: Without Brake (Pin 7 & 14 not connected) 21 20 19 18 17 16 15 14 13 12 11 10 22 9 8 23 7 24 1 2 3 4 5 • • • • • • • • Low conduction losses Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile 6 Symbol VRRM ID IFSM Parameter Repetitive Peak Reverse Voltage DC Forward Current Surge Forward Current tp = 10ms TC = 80°C Tj = 25°C Max ratings 1600 80 500 Tj = 150°C 400 Unit V A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-4 APTGF50X60BTP3 – Rev 0, 1. Absolute maximum ratings Diode rectifier Absolute maximum ratings September 2003 All ratings @ Tj = 25°C unless otherwise specified APTGF50X60RTP3 APTGF50X60BTP3 Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD IF Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation DC Forward Current IGBT & Diode Inverter Symbol VCES IC ICM VGE PD RBSOA IF IFRM TC = 25°C TC = 80°C Absolute maximum ratings Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Save Operating Area DC Forward Current Repetitive Peak Forward Current 2. Electrical Characteristics Diodes Rectifier Electrical Characteristics Symbol IR VF RthJC TC = 25°C TC = 80°C TC = 25°C Characteristic Reverse Current Forward Voltage Junction to Case TC = 25°C Tj = 125°C TC = 80°C tp = 1ms Test Conditions VR = 1600V Tj = 150°C Tj = 150°C IF = 50A IGBT Brake & Diode (only for APTGF50X60BTP3) Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Cies Cres Gate Threshold Voltage Gate – Emitter Leakage Current Input Capacitance Reverse Transfer Capacitance VF Forward Voltage RthJC Junction to Case Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE = 15V IC = 20A Tj = 125°C VGE = VCE , IC = 0.5mA VGE = 20V, VCE = 0V VGE = 0V,VCE = 25V f = 1MHz Tj = 25°C VGE = 0V IF = 10A Tj = 125°C IGBT Diode APT website – http://www.advancedpower.com Max ratings 600 35 25 70 ±20 155 10 Unit V Max ratings 600 70 50 125 ±20 250 225A @ 360V 30 80 Unit V Min Min 4.5 Typ 3 1.0 Typ 1 2.0 2.2 5.5 1100 70 1.25 1.2 A V W A A V W A Max Unit mA V 0.65 °C/W Max 500 2.5 Unit µA 6.5 400 V nA V pF 1.7 0.8 2.3 September 2003 Symbol VCES V °C/W 2-4 APTGF50X60BTP3 – Rev 0, IGBT & Diode Brake (only for APTGF50X60BTP3) Absolute maximum ratings APTGF50X60RTP3 APTGF50X60BTP3 IGBT & Diode Inverter Electrical Characteristics Collector Emitter on Voltage VGE(th) IGES Cies Cres Td(on) Tr Td(off) Gate Threshold Voltage Gate – Emitter Leakage Current Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Tf Td(on) Tr Td(off) Tf Eoff Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn off Energy VF Forward Voltage Qrr Reverse Recovery Charge RthJC VGE = 0V IF = 50A IF = 50A VR = 300V di/dt=800A/µs Min 600 4.5 Typ Max 1 1.95 2.2 5.5 500 2.45 2200 200 40 9 120 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 5.6 Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/50 T25 = 298.16 K RT = R25 exp B25 / 50 1 1 − T25 T V V nA pF ns 12 42 10 132 21 1.0 1.25 1.2 3.4 IGBT Diode Junction to Case 6.5 400 Unit V µA ns mJ 1.6 V µC 0.5 0.8 °C/W Min Typ 5 3375 Max Unit kΩ K Min Typ Max Unit T: Thermistor temperature RT: Thermistor value at T 3. Thermal and package characteristics Symbol Characteristic RMS Isolation Voltage, any terminal to case t =1 min, VISOL I isol<1mA, 50/60Hz TJ Operating junction temperature range TSTG Storage Temperature Range TC Operating Case Temperature To Heatsink Torque Mounting torque Wt Package Weight 2500 M5 APT website – http://www.advancedpower.com -40 -40 -40 V 150 125 125 3.3 300 September 2003 VCE(on) Test Conditions VGE = 0V, IC = 500µA VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 1 mA VGE = 20V, VCE = 0V VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 50A RG = 2.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 50A RG = 2.7Ω °C N.m g 3-4 APTGF50X60BTP3 – Rev 0, Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current APTGF50X60RTP3 APTGF50X60BTP3 4. Package outline PIN 1 ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 4-4 APTGF50X60BTP3 – Rev 0, September 2003 PIN 24