APTGT100TA60P Triple phase leg Trench + Field Stop IGBT® Power Module VBUS2 VBUS3 G1 G3 G5 E1 U G2 E2 0/VBUS1 E3 V U W G6 E4 E6 0/VBUS2 0/VBUS3 VBUS 2 G1 0/VBUS 1 E5 G4 VBUS 1 E1 VBUS 3 G3 0/VBUS 2 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control E3 G5 0/VBUS 3 E5 E2 E4 E6 G2 G4 G6 V W Absolute maximum ratings Symbol VCES Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Very low (12mm) profile • Each leg can be easily paralleled to achieve a phase leg of three times the current capability • Module can be configured as a three phase bridge • Module can be configured as a boost followed by a full bridge Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration Reverse Bias Safe Operating Area TC = 25°C Max ratings 600 150 100 200 ±20 340 Tj = 150°C 200A @ 550V TC = 25°C TC = 80°C TC = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGT100TA60P – Rev 0 May, 2005 VBUS1 VCES = 600V IC = 100A @ Tc = 80°C APTGT100TA60P All ratings @ Tj = 25°C unless otherwise specified Symbol Characteristic Test Conditions ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Min VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 100A Tj = 150°C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz 5.0 Min Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 100A R G = 10Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 100A R G = 10Ω Test Conditions IRM Maximum Reverse Leakage Current VR=600V IF(A V) Maximum Average Forward Current 50% duty cycle VF Diode Forward Voltage IF = 100A VGE = 0V trr Reverse Recovery Time IF = 100A VR = 300V Qrr Reverse Recovery Charge di/dt =2000A/µs Typ 1.5 1.7 5.8 Typ 6100 390 190 115 45 225 Unit 250 1.9 µA 6.5 400 V nA Max Unit V pF ns 55 130 50 300 ns 70 1.8 3.5 Min 600 Typ Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 100 1.6 1.5 125 220 4.7 Tj = 150°C 9.9 APT website – http://www.advancedpower.com Max mJ Max 250 500 Unit V µA A 2 V ns µC 2-5 APTGT100TA60P – Rev 0 May, 2005 Electrical Characteristics APTGT100TA60P Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M6 2500 -40 -40 -40 3 Typ Max 0.44 0.77 Unit °C/W V 175 125 100 5 250 °C N.m g Package outline (dimensions in mm) APT website – http://www.advancedpower.com 3-5 APTGT100TA60P – Rev 0 May, 2005 5 places (3:1) APTGT100TA60P Typical Performance Curve Output Characteristics (V GE=15V) 200 T J=25°C 175 150 150 TJ=125°C 125 T J=150°C 100 V GE=13V 125 VGE =15V 100 75 75 50 50 VGE =9V 25 25 TJ=25°C 0 0 0.5 1 1.5 V CE (V) 0 2 2.5 0 3 0.5 1 1.5 2 V CE (V) 3 3.5 7 175 V CE = 300V V GE = 15V RG = 10Ω T J = 150°C 6 TJ=25°C 150 5 E (mJ) 125 100 TJ=125°C 75 Eoff Eon 4 3 2 50 T J=150°C TJ=25°C 0 5 6 7 Er 1 25 8 9 Eon 0 10 11 0 12 25 50 75 Switching Energy Losses vs Gate Resistance VCE = 300V VGE =15V IC = 100A TJ = 150°C 10 8 Reverse Bias Safe Operating Area 250 Eon 200 IC (A) 12 Eoff 6 100 125 150 175 200 IC (A) V GE (V) E (mJ) 2.5 Energy losses vs Collector Current Transfert Characteristics 200 IC (A) VGE=19V T J = 150°C 175 IC (A) IC (A) Output Characteristics 200 Eoff 150 100 4 Eon 2 VGE=15V T J=150°C RG=10Ω 50 Er 0 0 0 10 20 30 40 50 Gate Resistance (ohms) 60 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.4 IGBT 0.9 0.7 0.3 0.5 0.2 0.1 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds APT website – http://www.advancedpower.com 4-5 APTGT100TA60P – Rev 0 May, 2005 Thermal Impedance (°C/W) 0.5 APTGT100TA60P Forward Characteristic of diode 200 VCE =300V D=50% RG=10Ω TJ=150°C 100 ZCS 80 150 125 Tc=85°C ZVS 60 175 IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 100 T J=125°C 75 40 50 Hard switching 20 T J=150°C 25 T J=25°C 0 0 0 25 50 75 100 125 0 150 0.4 0.8 IC (A) 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Thermal Impedance (°C/W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.9 Diode 0.7 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5-5 APTGT100TA60P – Rev 0 May, 2005 Rectangular Pulse Duration in Seconds