APTGF300DA120D3G VCES = 1200V IC = 300A @ Tc = 80°C Boost chopper NPT IGBT Power Module 3 Q2 1 6 7 2 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • High level of integration • M6 power connectors Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C Reverse Bias Safe Operating Area Tj = 125°C 600A@1150V TC = 25°C TC = 80°C TC = 25°C Unit V September, 2008 IC Max ratings 1200 420 300 600 ±20 2100 RBSOA Parameter Collector - Emitter Breakdown Voltage A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGF300DA120D3G – Rev 0 Symbol VCES APTGF300DA120D3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 300A Tj = 125°C VGE = VCE , IC = 12 mA VGE = 20V, VCE = 0V 5.2 Typ 3.2 3.9 5.8 Max Unit 5 3.7 mA 6.4 400 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Input Capacitance Cres Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn On Energy Eoff Turn Off Energy Isc Short Circuit data Test Conditions VGE = 0V, VCE = 25V f = 1MHz VGE=±15V, IC=300A VCE=600V Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A RG = 3.3Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A RG = 3.3Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 300A Tj = 125°C RG = 3.3Ω VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C Min Test Conditions Min Typ 19 1.4 nF 3 µC 100 60 530 ns 30 110 70 550 ns 40 25 mJ 21 2000 A Reverse diode ratings and characteristics IRRM 1200 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy Max VR=1200V IF = 300A IF = 300A VR = 600V di/dt =4500A/µs V Tj = 25°C 750 Tj = 125°C 1000 Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C 300 2.1 1.9 120 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 210 19 53 7 15 www.microsemi.com Unit µA A V September, 2008 VRRM Typ ns µC mJ 2-5 APTGF300DA120D3G – Rev 0 Symbol Characteristic APTGF300DA120D3G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight For terminals To Heatsink M6 M6 2500 -40 -40 -40 3 3 Typ Max 0.06 0.12 Unit °C/W V 150 125 125 5 5 350 °C N.m g D3 Package outline (dimensions in mm) 1° A www.microsemi.com 3-5 APTGF300DA120D3G – Rev 0 September, 2008 DÉTAIL A APTGF300DA120D3G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 600 600 TJ=25°C VGE=15V VGE=20V 450 IC (A) IC (A) 450 TJ = 125°C 300 VGE=12V 300 VGE=9V 150 150 TJ=125°C 0 0 0 1 2 * 3 VCE (V) 4 5 6 0 3 4 VCE (V) VCE = 600V VGE = 15V RG = 3.3 Ω TJ = 125°C E (mJ) 60 TJ=125°C 300 150 6 Eon Eoff 40 Err 20 TJ=25°C 0 0 5 6 7 8 9 10 11 0 12 150 300 450 600 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 120 750 VCE = 600V VGE =15V IC = 300A TJ = 125°C 80 600 Eon 60 IC (A) 100 E (mJ) 5 80 450 IC (A) 2 Energy losses vs Collector Current Transfert Characteristics 600 1 Eoff 40 450 300 VGE=15V TJ=125°C RG=3.3 Ω 150 20 Err 0 0 0 5 10 15 Gate Resistance (ohms) 0 20 300 600 900 1200 1500 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.05 0.04 0.03 0.02 0.01 IGBT September, 2008 0.06 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGF300DA120D3G – Rev 0 Thermal Impedance (°C/W) 0.07 APTGF300DA120D3G Forward Characteristic of diode 600 60 50 ZVS 40 ZCS 30 VCE=600V D=50% RG=3.3 Ω TJ=125°C TC=75°C 450 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 70 TJ=125°C 300 TJ=25°C 20 150 hard switching 10 0 0 0 100 200 300 0 400 0.5 IC (A) 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.14 0.12 0.1 Diode 0.9 0.7 0.08 0.06 0.04 0.02 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGF300DA120D3G – Rev 0 September, 2008 rectangular Pulse Duration (Seconds)