APTGT200DA120G Boost chopper Fast Trench + Field Stop IGBT® Power Module VBUS VCES = 1200V IC = 200A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction CR1 E2 0/VBUS VBUS 0/VBUS OUT E2 G2 Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1200 280 200 400 ±20 890 Tj = 125°C 400A @ 1100V TC = 25°C TC = 80°C TC = 25°C Unit V A V W July, 2006 Q2 G2 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT200DA120G – Rev 1 OUT Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration APTGT200DA120G All ratings @ Tj = 25°C unless otherwise specified ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 200A Tj = 125°C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn on Energy Eoff Turn off Energy IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy 5.0 Min Chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage 1.4 Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A R G = 2.7Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C R G = 2.7Ω Fall Time Tf Min Test Conditions VR=1200V IF = 200A VGE = 0V IF = 200A VR = 600V di/dt =2500A/µs www.microsemi.com Typ 1.7 2.0 5.8 Typ 14 0.8 0.6 260 30 420 Max Unit 350 2.1 µA 6.5 500 V nA Max Unit V nF ns 70 290 50 520 ns 90 20 mJ 20 Min 1200 Typ Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C 200 1.6 1.6 Tj = 25°C 170 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 280 18 36 10 18 Max 350 600 Unit V µA A 2.1 V ns µC July, 2006 Symbol Characteristic mJ 2-5 APTGT200DA120G – Rev 1 Electrical Characteristics APTGT200DA120G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.14 0.25 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT200DA120G – Rev 1 July, 2006 SP6 Package outline (dimensions in mm) APTGT200DA120G Typical Performance Curve Output Characteristics (VGE =15V) 400 TJ=125°C V GE=17V 300 IC (A) IC (A) T J = 125°C TJ=25°C 300 Output Characteristics 400 200 VGE =13V VGE=15V 200 VGE =9V 100 100 0 0 0 1 2 VCE (V) 3 4 0 Transfert Characteristics 350 TJ=25°C TJ=125°C E (mJ) IC (A) 250 200 150 100 TJ=125°C 3 VCE = 600V VGE = 15V RG = 2.7Ω T J = 125°C 40 300 2 VCE (V) 4 Energy losses vs Collector Current 50 400 1 30 Eon Eoff Er 20 Eon 10 50 0 0 5 6 7 8 9 10 11 0 12 50 100 150 200 250 300 350 400 IC (A) V GE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 50 450 VCE = 600V VGE =15V IC = 200A T J = 125°C 30 Eon 400 350 300 IF (A) E (mJ) 40 Eoff 20 Er 250 200 150 VGE =15V T J=125°C RG=2.7 Ω 100 10 50 0 0 0 4 8 12 16 Gate Resistance (ohms) 20 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 0.1 0.7 0.08 0.5 0.06 0.3 0.04 0.02 IGBT 0.9 July, 2006 0.14 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT200DA120G – Rev 1 Thermal Impedance (°C/W) 0.16 APTGT200DA120G Forward Characteristic of diode 400 VCE=600V D=50% RG =2.7Ω TJ=125°C Tc=75°C 50 ZVS 40 ZCS 30 T J=25°C 350 300 250 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 60 T J=125°C 200 150 20 100 10 Hard switching 0 0 0 40 TJ =125°C 50 80 120 160 IC (A) 200 240 0 280 0.4 0.8 1.2 1.6 V F (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.3 0.25 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 0.1 0.05 0 0.00001 Diode Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT200DA120G – Rev 1 July, 2006 rectangular Pulse Duration (Seconds)