140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF5943C RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Maximum Available Gain = 17dB @ 300MHz • High fT – 1.2 GHz typical 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Designed for general-purpose RF amplifier applications, such as pre-drivers, drivers, and oscillators. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC P D TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Value 30 Unit V 40 V Emitter-Base Voltage 3.5 V Collector Current 400 mA Total Device Dissipation Storage Temperature 1.0 W -65 to +150 °C 125 ºC/W Thermal Data R TH(J-C) Thermal Resistance, Junction – Case Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF5943C ELECTRICAL SPECIFICATIONS (Tcase = 25° 25° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCEO IC = 5 ma IB = 0 30 - - V BVCBO IC = 0.1 mA, IE = 0 40 - - V BVEBO IE = 0.1 mA, IC = 0 3.5 - - V ICBO VCB = 15 V, VBE = 0 V - - 50 µA ICEO VCE = 20 V, VBE = 0 V - - 10 µA hFE IC = 50 mA, VCE = 15 V 25 - 300 DYNAMIC Symbol Ftau NF G U max Test Conditions Current-Gain Bandwidth Product (IC = 35 mAdc, VCE = 15 Vdc, f = 100 MHz) IC = 35 mA VCE = 15 V f = 200 MHz IC = 10 mA VCE = 15 V f = 200 MHz Value Typ. Max. - 1.2 - GHz - 5.5 - dB - 12 - dB Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Unit Min. MRF5943C PACKAGE MECHANICAL DATA Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.