ADPOW MRF607

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF607
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
•
•
•
•
12.5V Silicon NPN, TO-39 packaged VHF & UHF Transistor
1.75 Watt Minimum Power Output @ 12.5V, 175 MHz
11.5 minimum Gain @ 12.5V, 175 MHz
50% Efficiency @ 12.5V, 175 MHz
1 2
3
1. EMITTER
2. BASE
3. COLLECTOR
TO-39
(common collector)
DESCRIPTION:
The MRF607 is a silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier,
pre-driver, driver, and output stages.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCEO
Parameter
Collector-Emitter Voltage
Value
16
Unit
Vdc
VCBO
VEBO
Collector-Base Voltage
36
Vdc
Emitter-Base Voltage
4.0
Vdc
IC
Collector Current
330
mA
3.5
28
Watts
mW/ ºC
Thermal Data
P
D
Total Device Dissipation @ TA = 25º C
Derate above 25º C
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF607
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
BVCES
BVCEO
BVEBO
ICEO
Test Conditions
Value
Unit
Min.
Typ.
Max.
Collector-Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0 Vdc)
36
-
-
Vdc
Collector-Emitter Sustaining Voltage
(IC=25 mAdc, IB=0)
16
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = .5 mA, IC = 0)
4.0
-
-
Vdc
-
-
.3
20
-
150
Collector Cutoff Current
(VCE = 10 Vdc, IB = 0)
mA
(on)
HFE
DC Current Gain
(IC = 50 mAdc, VCE = 5.0 Vdc)
-
DYNAMIC
Symbol
COB
Test Conditions
Output Capacitance
(VCB = 12 Vdc, IE = 0, f = 1.0 MHz)
Value
Min.
Typ.
Max.
-
-
15
Unit
pF
FUNCTIONAL
Symbol
GPE
Test Conditions
Power Gain
Collector Efficiency
ηC
Test Circuit-Figure 1
Pout = 1.75W, VCE =
12.5Vdc
f = 175 MHz
Test Circuit-Figure 1
Pout = 1.75W, VCE =
12.5Vdc
f = 175 MHz
Value
Typ.
Max.
11.5
-
-
dB
50
-
-
%
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Unit
Min.
MRF607
+
C5
L3
-
C4
L2
PIN
(R S=50 OHMS)
L1
C1
C2
Vcc = 12.5 V
C6
POUT
(RL=50 OHMS)
C3
L4
Figure 1 - 175 MHz RF AMPLIFIER CIRCUIT FOR GPE,
AND EFFICIENCY SPECIFICATIONS.
C1
C2
C3, C4
C5
C6
2.7-15 pF, ARCO 461
9.0-180 pF, ARCO 463
5.0-80 pF ARCO 462
1000 pF UNELCO
5 µF, 25 Vdc,
L1
L2
L3
L4
1 TURN #20 AWG, 3/8” I.D.
3 TURNS #20 AWG, 3/8” I.D.
0.22 µH MOLDED CHOKE
0.15 µH MOLDED CHOKE WITH
TANTALUM FERROXCUBE 56-590-65-3B
BEAD ON GROUND LEAD
.
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF607
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF607
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.