ADPOW MMBR911LT1

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MMBR911LT1
NPN SILICON
LOW NOISE, HIGH-FREQUENCY TRANSISTOR
MMBR911LT1G
* G Denotes RoHS Compliant, Pb Free Terminal Finish
DESCRIPTION:
Designed for low noise, wide dynamic range front–end amplifiers and
low–noise VCO’s. Available in a surface–mountable plastic package. This
small–signal plastic transistor offers superior quality and performance
at low cost.
FEATURES:
•
•
•
•
•
High Gain–Bandwidth Product
fT = 7.0 GHz (Typ) @ 30 mA
Low Noise Figure
NF = 1.7 dB (Typ) @ 500 MHz
High Gain
GNF = 17 dB (Typ) @ 10 mA/500 MHz
State–of–the–Art Technology
Fine Line Geometry
Ion–Implanted Arsenic Emitters
Gold Top Metallization and Wires
Silicon Nitride Passivation
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
MAXIMUM RATINGS
Symbol
VCEO
Rating
Collector-Emitter Voltage
Value
12
Unit
Vdc
VCBO
Collector-Base Voltage
20
Vdc
VEBO
Emitter-Base Voltage
2.0
Vdc
IC
Collector Current-Continuous
60
mA
PD(max)
Power Dissipation @ Tcase = 75°C (1)
Derate linearly above Tcase = 75°C
333
4.44
mW
mW/°C
TSTG
TJmax
Storage Temperature
Maximum Junction Temperature
-55 to +150
150
ºC
ºC
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
MMBR911LT1
MMBR911LT1G
THERMAL CHARACTERISTICS
Symbol
Rating
Value
Unit
RθJC
Thermal Resistance, Junction to Case
225
°C/W
ELECTRICAL SPECIFICATIONS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Symbol
Characteristics
Value
Unit
Min.
Typ.
Max.
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=1.0 mA, IB=0)
12
-
-
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=0.1 mA, IE=0)
20
-
-
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=0.1 mA, IC=0)
2.0
-
-
Vdc
-
-
50
nAdc
ICBO
Collector Cutoff Current
(VCB= 15 Vdc, IE=0)
ON CHARACTERISTICS
Symbol
HFE
Characteristics
DC Current Gain
(IC=30 mAdc, VCE=10 Vdc)
Value
Unit
Min.
Typ.
Max.
30
-
200
-
DYNAMIC CHARACTERISTICS
Symbol
Ccb
fT
Characteristics
Value
Unit
Min.
Typ.
Max.
Collector-Base Capacitance
(VCB=10 Vdc, IE=0, f=1.0 MHz)
-
-
1.0
pF
Current Gain-Bandwidth Product
(VCE=10 Vdc, IC=30 mAdc, f=1.0 GHz)
-
6.0
-
GHz
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
MMBR911LT1
MMBR911LT1G
FUNCTIONAL TESTS
Symbol
Test Conditions
GNF
Gain @ Noise Figure
(IC=10 mAdc, VCE=10 Vdc)
NF
Noise Figure
(IC=10 mAdc, VCE=10 Vdc)
Value
Unit
Min.
Typ.
Max.
f=0.5 GHz
f=1.0 GHz
-
17
11
-
dB
f=0.5 GHz
f=1.0 GHz
-
2.0
2.9
-
dB
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
MMBR911LT1
MMBR911LT1G
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
MMBR911LT1
MMBR911LT1G
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
MMBR911LT1
MMBR911LT1G
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005