140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 1 3 4 • 1. Emitter 2. Base 3. Collector 4. Case TO-72 Characterized with S-Parameters DESCRIPTION: The 2N5179 is a Silicon NPN transistor, designed for VHF and UHF equipment. It is ideal for pre-driver, low noise amplifier, and oscillator applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° 25° C) Symbol Parameter Value Unit VCEO VCBO VEBO IC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current 12 20 2.5 50 Vdc Vdc Vdc mA 300 1.71 mW mW/ ºC Thermal Data PD Total Device Dissipation @ TA = 25ºC Derate above 25ºC Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N5179 ELECTRICAL SPECIFICATIONS (Tcase = 25° 25° C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO Test Conditions Value Unit Min. Typ. Max. Collector-Emitter Sustaining Voltage (IC = 3.0 mAdc, IB = 0) 12 - - Vdc Collector-Base Breakdown Voltage (IC=1.0 Adc, IE=0) 20 - - Vdc Emitter Base Breakdown Voltage (IE = 0.01 mAdc, IC = 0) 2.5 - - Vdc - - .02 mA 25 - 250 - Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) - - 1.0 Vdc Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) - - 0.4 Vdc Collector Cutoff Current (VCB = 15 Vdc, IE = 0) (on) HFE VBE(sat) VCE(sat) DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 Vdc) DYNAMIC Symbol fT CCB Test Conditions Current-Gain - Bandwidth Product (IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz) Collector-base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Value Unit Min. Typ. Max. 900 1500 - MHz - - 1.0 pF FUNCTIONAL Symbol NF GPE Test Conditions Noise Figure (figure 1) Common-Emitter Amplifier Power Gain (figure 1) Value Unit Min. Typ. Max. IC = 1.5 mAdc, VCE = 6.0 Vdc, f = 200 MHz - - 4.5 dB IC = 1.5 mAdc, VCE = 6.0 Vdc, f = 200 MHz 20 - - dB Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N5179 FUNCTIONAL (CONT) Symbol GUMAX MAG |S21| 2 Value Test Conditions Min. Typ. Max. Unit Maximum Unilateral Gain (1) IC = 5 mAdc, VCE = 6.0 Vdc, f = 200 MHz - 17 - dB Maximum Available Gain IC = 5 mAdc, VCE = 6.0 Vdc, f = 200 MHz - 18 - dB IC = 5 mAdc, VCE = 6.0 Vdc, f = 200 MHz - 12 - dB Insertion Gain Note: 1. Maximum Unilateral Gain = |S21|2 / (1 - |S11|2) (1 - |S22|2) TEST CIRCUIT SCHEMATIC D1 D2 R1 L3 C4 External Shield C8 C1 Power Out L1 Power In L2 C7 C5 C2 C3 C6 R2 RFC 1.0 uH -VEE VCC C9 C1: C2: C3, C7, C8: C4: C5, C9: C6: Cbypass: R1: 0.02 uF 3.0-35 pF 2.0-10 pF 1.0-5.0 pF 0.1 uF 0.001 uF 1200 pF 91 ohm R2: L1: L2: L3: 10 K 1 ¾turn, #18 AWG 0.5” L, 0.5” Dia. 2 turn, #16 AWG 0.5” L, 0.5” Dia. 2 turn, #13 AWG 0.25” L, 0.5” Dia. Position ¼” from L2 Figure 1. 200 MHz Amplifier for Power Gain and Noise Figure specifications. Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N5179 Table 1. Common Emitter S-Parameters, @ VCE = 6 V, IC = 5 mA f S11 S21 S12 S22 (MHz) |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| 100 .471 -90 6.78 122 .023 64 .844 -51 200 .314 -145 4.20 100 .034 58 .780 -93 300 .230 156 2.76 91 .043 65 .768 -134 400 .171 108 2.17 86 .056 63 .756 -177 500 .168 54 1.86 79 .062 62 .741 140 600 .149 -9 1.53 71 .069 66 .740 98 700 .137 -72 1.31 67 .073 71 .739 54 800 .119 -129 1.18 64 .092 74 .744 8 900 .153 -174 1.13 58 .101 68 .742 -38 1000 .171 122 .979 49 .106 71 .749 -82 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. ∠φ 2N5179 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.