ADPOW 2N3866A

2N3866 / 2N3866A
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
•
•
•
Silicon NPN, To-39 packaged VHF/UHF Transistor
Specified 400 MHz, 28Vdc Characteristics
- Output Power = 1.0 Watt
- Minimum Gain = 10 dB
- Efficiency = 45%
800 MHz Current-Gain Bandwidth Product
1. Emitter
2. Base
3. Collector
TO-39
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and
output stages. Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCEO
Parameter
Collector-Emitter
Value
30
Unit
Vdc
VCBO
VEBO
Collector-Base Voltage
55
Vdc
Emitter-Base Voltage
3.5
Vdc
IC
Collector Current
400
mA
5.0
28.6
Watts
mW/ º C
Thermal Data
P
D
Total Device Dissipation
Derate above 25º C
2N3866.PDF 10-28-02
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
2N3866 / 2N3866A
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
BVCER
BVCEO
BVCBO
BVEBO
ICEO
ICEX
Test Conditions
Value
Min.
Typ.
Max.
Unit
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, RBE = 10 ohms)
55
-
-
Vdc
Collector-Emitter Sustaining Voltage
(IC=5.0 mAdc, IB=0)
30
-
-
Vdc
Collector-Base Breakdown Voltage
(IE = 0, IC = 0.1 mAdc)
55
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
3.5
-
-
Vdc
Collector Cutoff Current
(VCE = 28 Vdc, IB = 0)
-
-
20
µA
Collector Cutoff Current
(VCE = 55 Vdc, VBE = 1.5 Vdc)
-
-
100
µA
5.0
10
25
-
200
200
-
-
-
1.0
Vdc
(on)
HFE
VCE(sat)
DC Current Gain
(IC = 360 mAdc, VCE = 5.0 Vdc) Both
(IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866
(IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866A
Collector-Emitter Saturation Voltage
(IC = 100 mAdc, IB = 20 mAdc)
DYNAMIC
Symbol
fT
COB
Test Conditions
Current-Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz)
Output Capacitance
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
Value
2N3866
2N3866A
Min.
Typ.
Max.
Unit
500
800
800
-
-
MHz
-
2.8
3.5
pF
2N3866.PDF 10-28-02
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
2N3866 / 2N3866A
FUNCTIONAL
Symbol
Test Conditions
GPE
Power Gain
Pout
Value
Test Circuit-Figure 1
Pin = 0.1 W, VCE = 28Vdc
f = 400 MHz, TC = 25 C
Test Circuit-Figure 1
Pin = 0.1 W, VCE = 28Vdc
f = 400 MHz, TC = 25 C
Test Circuit-Figure 1
Pin = 0.1 W, VCE = 28Vdc
f = 400 MHz, TC = 25 C
Output Power
Collector Efficiency
ηC
8-60
L1
Typ.
Max.
Unit
10
-
-
dB
1.0
-
-
Watts
45
-
-
%
LS
POUT
(RL=50 OHMS)
RFC
8-60
PIN
(R S=50 OHMS)
Min.
RFC
0.9-7
3-35
12
RFC
5.6 OHMS
1000
VCE = -28V
Figure 1 - 400 MHz RF AMPLIFIER CIRCUIT FOR GPE, POUT, AND EFFICIENCY SPECIFICATIONS.
L1: 2 TURNS No. 18 wire, ¼” ID, 1/8” long
Ls: 2 ¾ TURNS No. 18 wire, ¼” ID, 3/16” long
Capacitor values in pF unless
otherwise indicated.
Tuning capacitors are air variable
.
2N3866.PDF 10-28-02
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
2N3866 / 2N3866A
400
TO-39
2N5109
NPN
200
3
10
15
12
1200
20
400
20
400
TO-39
MRF5943C
NPN
200
3.4
30
15
11.4
1000
30
400
POWER MACRO
MRF553
NPN 175
1.5
11.5
60
12.5
16
500
SO-8
MRF5943, R1, R2
NPN
200
3.4
30
15
15
1300
30
400
TO-72
2N5179
NPN
200
4.5
1.5
6
17
900
1
12
50
POWER MACRO
MRF553T
NPN 175
1.5
11.5
50
12.5
16
500
TO-72
2N2857
NPN
300
5.5
50
6
13
1600
1
15
40
TO-39
MRF607
NPN 175
1.75
11.5
50
12.5
16
330
TO-39
MRF517
NPN
300
7.5
50
15
5.5
4600
3
25
150
TO-39
2N6255
NPN 175
3
7.8
50
12.5
18 1000
TO-72
MRF904
TO-72
2N5179
NPN 200
TO-72
2N6304
NPN
450
5
2
5
MACRO T
BFR91
NPN
500
1.9
2
5
6
12
50
MA C R O X
MRF559
NPN 512
0.5
10
65
7.5
16
150
MA C R O X
MRF559
NPN 512
0.5
13
60
12.5
16
150
TO-39
2N3866A
NPN 400
1
10
45
28
30
400
M R F 3 8 6 6 , R 1 , R 2 NPN 400
1
10
45
28
30
SO-8
NPN
450
1.5
5
6
11
11
Ftau (MHz)
Type
Device
Packag
Device
GPE VCC
20
4000
15
50
12
35
2.6
15
100
NPN
500
2
10
10
14.5
500
NPN
500
2
50
10
15.5
17.8
5000
MACRO X
MRF581A
NPN
500
2
50
10
14
15
5000
Macro
BFR90
NPN
500
2.4
2
10
15
18
5000
400
TO-72
BFY90
NPN
500
2.5
2
5
20
TO-72
MRF914
NPN
500
2.5
5
10
MACRO X
MRF581
NPN
500
2.5
50
10
11
50
12.5
16
400
POWER MACRO
MRF555T
NPN 470
1.5
11
50
12.5
16
400
MA C R O X
MRF559
NPN 870
0.5
6.5
70
7.5
16
150
MA C R O X
MRF559
NPN 870
0.5
9.5
65
12.5
16
150
SO-8
MRF8372,R1,R2
NPN 870
0.75
8
55
12.5
16
200
POWER MACRO
MRF557
NPN 870
1.5
8
55
12.5
16
400
POWER MACRO
MRF557T
NPN 870
1.5
8
55
12.5
16
400
15
200
15
200
15
30
1300
15
50
15
4500
12
40
15
17.8
5000
16
200
TO-39
MRF586
NPN
500
3
90
15
11
14.5
4500
2.2
17
200
MRF951
NPN
1000
1.3
5
6
14
17
8000
0.45
10
100
MACRO X
MRF571
NPN
1000
1.5
10
6
10
8000
1
10
70
MACRO T
BFR91
NPN
1000
2.5
2
5
8
11
5000
1
12
35
MACRO T
BFR90
NPN
1000
3
2
10
10
12.5
5000
1
15
30
TO-39
MRF545
PNP
14
1400
2
70 400
TO-39
MRF544
NPN
13.5
1500
1
1
1
2
2
3
8
5
1
4
3
2N3866.PDF 10-28-02
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Macro
T
Visit our website
at WWW.ADVANCEDPOWER.COM
contact our factory direct.
Macroor X
70 400
RF (LNA / General Purpose) Selection Guide
Low Cost RF Plastic Package Options
4
1
MACRO X
RF (Low Power PA / General Purpose) Selection
2
30
1
1
BFR96
1.5
15
1400
5000
MRF5812, R1, R2
NPN 470
1
14
SO-8
MRF555
3.5
16.5
MACRO T
POWER MACRO
Ccb(pF)
BVCEO
IC max (mA)
20
12
Gu Max (dB)
12
50
Freq (MHz)
NF (dB)
NF IC (mA)
NF VCE
GNF (dB)
60
10
BVCEO
18
1
IC max (mA)
0.15
NPN 175
Efficiency (%)
NPN 175
2N4427
GPE (dB)
Pout
MRF4427, R2
Type
SO-8
TO-39
Package
GPE Freq (MHz)
RF Low Power PA, LNA, and General Purpose Discrete Selector Guide
Power
SO-8
2N3866 / 2N3866A
2N3866.PDF 10-28-02
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.