ADVANCEDPHOTONIX PDV-P9003-1

CdS Photoconductive Photocells
PDV-P9003-1
PACKAGE
DIMENSIONS INCH [mm]
PACKAGE DIMENSIONS INCH [mm]
±.010 [0.25]
.138 [3.50]
+.015 [0.38]
-.010 [0.25]
.079 [2.00]
EPOXY ON LEADS 3 mm MAX
2X Ø.016 [0.40]
.100 [2.54]
PLASTIC
COATED
±.010 [0.25]
Ø.165 [4.19]
2X 1.023 [26.0]
CERAMIC PACKAGE
FEATURES
DESCRIPTION
• Visible light response
• Sintered construction
• Low cost
APPLICATIONS
The PDV-P9003-1 are (CdS), Photoconductive
• Camera exposure
photocells designed to sense light from 400 to 700
• Shutter controls
nm. These light dependent resistors are available in
• Night light Controls
a wide range of resistance values. They’re packaged
in a two leaded plastic-coated ceramic header.
CELL RESISTANCE VS. ILLUMINANCE
SYMBOL
PARAMETER
MIN
MAX
Vpk
Applied Voltage
150
Pd Δpo/Δt
Continuous Power Dissipation
90
TO
Operating and Storage Temperature
TS
Soldering Temperature*
-30
+75
+260
UNITS
V
mW/°C
°C
Resistance in Kohms
1000
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
100
°C
10
1
1
* 0.200 inch from base for 3 seconds with heat sink.
10
100
Illuminance in lux
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
RD
RI
S
lrange
lpeak
tr
Tf
CHARACTERISTIC
TEST CONDITIONS
After 10 sec. @ 10 Lux @ 2856 °K
10 Lux @ 2856 °K
LOG(R100)-LOG(R10)**
Sensitivity
LOG(E100)-LOG(E10)***
Spectral Application Range Flooded
Spectral Application Range Flooded
Rise Time
10 Lux @ 2856 °K
Fall Time
After 10 Lux @ 2856 °K
Dark Resistance
Illuminated Resistance
MIN
TYP
1
23
MAX
33
W/Lux
0.85
400
700
520
60
25
UNITS
MW
KW
nm
nm
ms
ms
**R100, R10: cell resistances at 100 Lux and 10 Lux at 2856 °K respectively .
***E100, E10: luminances at 100 Lux and 10 Lux 2856 °K respectively.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
REV 3/30/06