LS101A / 101B / 101C VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diodes Features • • • • Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop Applications 9612009 HF-Detector Protection circuit Diode for low currents with a low supply voltage Small battery charger Mechanical Data Power supplies DC / DC converter for notebooks Case:QuadroMELF Glass Case (SOD-80) Weight: approx. 34 mg Cathode Band Color: Black Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box Parts Table Part Type differentiation Ordering code Remarks LS101A VR = 60 V, VF @ IF1 mA max. 0.41 V LS101A-GS18 or LS101A-GS08 Tape and Reel LS101B VR = 50 V, VF @ IF1 mA max. 0.4 V LS101B-GS18 or LS101B-GS08 Tape and Reel LS101C VR = 40 V, VF @ IF1 mA max. 0.39 V LS101C-GS18 or LS101C-GS08 Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Document Number 85628 Rev. 1.3, 13-Apr-04 tp = 10 µs Part Symbol Value Unit LS101A VR 60 V LS101B VR 50 V LS101C VR 40 V IFSM 2 A IFRM 150 mA IF 30 mA www.vishay.com 1 LS101A / 101B / 101C VISHAY Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Junction ambient Test condition Symbol Value Unit RthJA 320 K/W Tj 125 °C Tstg - 65 to + 150 °C on PC board 50 mmx50 mmx1.6 mm Junction temperature Storage temperature range Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Reverse Breakdown Voltage Test condition IR = 10 µA Forward voltage drop Min V(BR)R 60 Typ. Max Unit V V LS101B V(BR)R 50 V(BR)R 40 LS101A IR 200 nA VR = 40 V LS101B IR 200 nA VR = 30 V LS101C IR 200 nA IF = 1 mA LS101A VF 0.41 V LS101B VF 0.4 V LS101C VF 0.39 V LS101A VF 1 V LS101B VF 0.95 V LS101C VF 0.9 V LS101A CD 2.0 pF LS101B CD 2.1 pF LS101C CD 2.2 pF IF = 15 mA Diode capacitance Symbol LS101C VR = 50 V Leakage current Part LS101A VR = 0 V, f = 1 MHz V Typical Characteristics (Tamb = 25 °C unless otherwise specified) Tj =150 °C IR - Reverse Current ( µ A) Tj =125 °C 10 Tj =100 °C Tj =75 °C 1 Tj =50 °C 0.1 Tj =25 °C 2.0 C D – Diode Capacitance ( pF ) 100 0.01 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 5 16204 10 15 20 25 30 35 40 45 50 V R - Reverse V oltage ( V ) Fig. 1 Reverse Current vs. Reverse Voltage www.vishay.com 2 Tj=25°C 1.8 0 16205 5 10 15 20 25 30 35 40 45 50 V R – Reverse Voltage ( V ) Fig. 2 Diode Capacitance vs. Reverse Voltage Document Number 85628 Rev. 1.3, 13-Apr-04 LS101A / 101B / 101C VISHAY Vishay Semiconductors I F - Forward Current ( mA ) 10.00 1.00 0.10 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 16206 V F - Forward V oltage ( V ) Fig. 3 Forward Current vs. Forward Voltage Package Dimensions in mm (Inches) 1.5 ± 0.1 (0.06 ± 0.004) ss la G 1. 7 (0 .0 7) Cathode indification Glass > R 3 (R 0.12) 0.47 max. (0.02) 3.5 ± 0.2 (0.14 ± 0.008) Mounting Pad Layout 2.50 (0.098) max technical drawings according to DIN specifications Glass case Quadro Melf / SOD 80 JEDEC DO 213 AA 5 (0.197) ref 2 (0.079) min 1.25 (0.049) min 96 12071 Document Number 85628 Rev. 1.3, 13-Apr-04 www.vishay.com 3 LS101A / 101B / 101C VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 85628 Rev. 1.3, 13-Apr-04