BAR63V-02V Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applications for this PIN Diode are wireless, mobile and TV-systems. Features • Low forward resistance • Space saving SOD-523 package with low series inductance • Very small reverse capacitance • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 1 1 2 2 16863 RF-signal tuning Mobile, wireless and TV-Applications e3 Applications Mechanical Data Case: SOD-523 Plastic case Weight: approx. 1.6 mg Cathode Band Color: Laser marking Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box For frequency up to 3 GHz Parts Table Part BAR63V-02V Ordering code Marking BAR63V-02V-GS18 or BAR63V-02V-GS08 Remarks C Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Reverse voltage Parameter Test condition VR 50 V Forward current IF 100 mA Junction temperature Tj 150 °C Tstg - 55 to + 150 °C Symbol Value Unit RthJS 100 K/W Storage temperature range Unit Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Junction soldering point Document Number 85642 Rev. 1.5, 29-Jun-05 Test condition www.vishay.com 1 BAR63V-02V Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Symbol Min Reverse voltage Parameter IR = 10 µA Test condition VR 50 Reverse current VR = 35 V IR Typ. Forward voltage IF = 100 mA VF f = 1 MHz, VR = 0 CD 0.28 f = 1 MHz, VR = 5 V Charge carrier life time Unit 10 nA V Diode capacitance Forward resistance Max 1.2 CD 0.23 f = 100 MHz, IF = 1 mA rf 2.0 f = 100 MHz, IF = 5 mA rf 1.1 V pF 0.3 pF Ω 2.0 Ω f = 100 MHz, IF = 10 mA rf 0.9 Ω IF = 10 mA, IR = 6 mA, iR = 3 mA trr 115 ns Typical Characteristics (Tamb = 25 °C unless otherwise specified) rf - Forward Resistance ( W ) 6 100.00 f = 100 MHz I F - Forward Current ( mA ) 5 4 3 2 1 0 0.1 1.0 10 IF - Forward Current ( mA ) 18341_1 10.00 1.00 0.10 0.01 100 0.5 Figure 1. Forward Resistance vs. Forward Current 0.8 0.9 1.0 120 f = 1 MHz 0.25 V R - Reverse V oltage ( V ) CD - Diode Capacitance ( pF ) 0.7 Figure 3. Forward Current vs. Forward Voltage 0.30 0.20 0.15 0.10 0.05 0.00 0 4 8 12 16 20 24 Figure 2. Diode Capacitance vs. Reverse Voltage www.vishay.com 100 80 60 40 20 0 0.01 28 VR - Reverse V oltage (V) 18333 2 0.6 VF - Forward Voltage ( V ) 18325 18329 0.1 1.0 10 100 1000 IR - Reverse Current ( µA ) Figure 4. Reverse Voltage vs. Reverse Current Document Number 85642 Rev. 1.5, 29-Jun-05 BAR63V-02V Vishay Semiconductors 12 I F - Forward Current ( mA ) 10 IF = 10 mA IR = 6 mA i rr = 3 mA 8 6 4 2 0 -2 -4 -6 -8 -50 0 50 100 150 200 Recovery Time ( ns ) 18337 Figure 5. Typical Charge Recovery Curve ISO Method E 0.6 (0.023) 0.15 (0.006) Package Dimensions in mm (Inches) 0.22 (0.008) 0.16 (0.006) 0.8 (0.031) Mounting Pad Layout 1.6 (0.062) 0.3 (0.012) 1.35 (0.053) 0.15 A A 1.2 (0.047) 0.39 (0.015) 0.35 (0.014) 16864 Document Number 85642 Rev. 1.5, 29-Jun-05 www.vishay.com 3 BAR63V-02V Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 4 Document Number 85642 Rev. 1.5, 29-Jun-05