VISHAY BAS70-HT3

BAS70-HT3 to BAS70-06-HT3
VISHAY
Vishay Semiconductors
Schottky Diodes
Features
• These diodes feature very low turn-on voltage and
fast switching.
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges.
• Space saving LiLiPut package
Top view
Pin 1
BAS70-HT3
BAS70-06-HT3
3
3
Top View
Mechanical Data
Case: LLP75-3B Plastic Package
Molding Compound Flammability Rating:
UL 94 V-0
Terminals: High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Weight: 5 mg
1
2
2
1
BAS70-05-HT3
BAS70-04-HT3
3
3
Top View
2
1
2
1
17007
Parts Table
Part
Ordering code
Marking
Remarks
BAS70-HT3
BAS70-HT3-GS08
73
Tape and Reel
BAS70-04-HT3
BAS70-04-HT3-GS08
74
Tape and Reel
BAS70-05-HT3
BAS70-05-HT3-GS08
75
Tape and Reel
BAS70-06-HT3
BAS70-06-HT3-GS08
76
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
Symbol
Value
VRRM
70
Unit
V
IF
200
mA
Forward continuous current
Tamb = 25 °C
Surge forward current
tp < 1 s, Tamb = 25 °C
IFSM
600
mA
Power dissipation
Tamb = 25 °C
Ptot
200
mW
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Test condition
Symbol
Value
Unit
RθJA
430
°C
Junction temperature
Tj
125
°C
Storage temperature range
TS
- 55 to +125
°C
Document Number 85689
Rev. 3, 02-Jun-03
www.vishay.com
1
BAS70-HT3 to BAS70-06-HT3
VISHAY
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
V(BR)R
70
Typ.
Max
Unit
20
100
nA
VF
410
mV
VF
1000
mV
2
pF
5
ns
Reverse breakdown voltage
IR = 10 µA (pulsed)
Leakage current
VR = 50 V, tp < 300 µs
IR
Forward voltage
tp < 300 µs, IF = 1.0 mA
tp < 300 µs, IF = 15 mA
Capacitance
VR = 0 V, f = 1 MHz
Ctot
Reverse recovery time
IF = 10 mA, IR = 10 mA,
Irr = 1 mA, RL = 100 Ω
V
1.5
trr
Package Dimensions in mm
18057
www.vishay.com
2
ISO Method E
Document Number 85689
Rev. 3, 02-Jun-03
BAS70-HT3 to BAS70-06-HT3
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85689
Rev. 3, 02-Jun-03
www.vishay.com
3