AAT7126 30V N-Channel Power MOSFET General Description Features The AAT7126 30V N-Channel Power MOSFET is a member of AnalogicTech™'s TrenchDMOS™ product family. Using the ultra-high density proprietary TrenchDMOS technology, this product demonstrates high power handling and small size. • • • Applications Dual SOP-8 Package Battery-powered portable equipment Laptop computers Desktop computers DC/DC converters Absolute Maximum Ratings Symbol VDS VGS Top View Description D1 D2 D2 8 7 6 5 1 S1 2 G1 3 S2 4 G2 Value Drain-Source Voltage Gate-Source Voltage TA = 25°C TA = 70°C Continuous Drain Current @ TJ=150°C IDM IS Pulsed Drain Current Continuous Source Current (Source-Drain Diode) 1 TA = 25°C Maximum Power Dissipation 1 TA = 70°C Operating Junction and Storage Temperature Range TJ, TSTG D1 (TA=25°C unless otherwise noted) ID PD Preliminary Information • • • • VDS(MAX) = 30V ID(MAX) 1 = 6.8A @ 25°C Low RDS(ON): • 26 mΩ @VGS = 10V • 41 mΩ @ VGS = 4.5V 1 Units 30 ±20 ±6.8 ±5.4 ±24 1.7 2.0 1.25 -55 to 150 °C Value Units 100 62.5 35 °C/W °C/W °C/W V A W Thermal Characteristics Symbol RθJA RθJA2 RΘJC 7126.2002.10.0.9 Description Typical Junction-to-Ambient steady state, one FET on Industry Standard Junction-to-Ambient Figure, t < 10 sec. Typical Junction-to-Case, one FET on 1 AAT7126 30V N-Channel Power MOSFET Electrical Characteristics Symbol (TJ=25°C unless otherwise noted) Description Conditions DC Characteristics BVDSS Drain-Source Breakdown Voltage RDS(ON) Drain-Source ON-Resistance ID(ON) VGS(th) IGSS On-State Drain Current 2 Gate Threshold Voltage Gate-Body Leakage Current IDSS 2 Drain Source Leakage Current gfs Forward Transconductance 2 Dynamic Characteristics 3 QG Total Gate Charge QGT Total Gate Charge QGS Gate-Source Charge QGD Gate-Drain Charge tD(ON) Turn-ON Delay tR Turn-ON Rise Time tD(OFF) Turn-OFF Delay tF Turn-OFF Fall Time Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage IS Continuous Diode Current VGS=0V, ID=250µA VGS=10V, ID=6.8A VGS=4.5V, ID=5.4A VGS=10V ,VDS=5V (Pulsed) VGS=VDS, ID=250µA VGS=±20V, VDS=0V VGS=0V,VDS=30V VGS=0V,VDS=30V, TJ=70°C VDS=5V, ID=6.8A VDS=15V, ID=6.8A, VGS=5V VDS=15V, ID=6.8A, VGS=10V VDS=15V, ID=6.8A, VGS=10V VDS=15V, ID=6.8A, VGS=10V VDD=15V, VGS=10V, RD=3Ω, RG=6Ω VDD=15V, VGS=10V, RD=3Ω, RG=6Ω VDD=15V, VGS=10V, RD=3Ω, RG=6Ω VDD=15V, VGS=10V, RD=3Ω, RG=6Ω 2 VGS=0, IS=1.7A Min Typ Max 30 Units V 19.5 32 26 41 24 1.0 ±100 1 5 14 8.6 16 2.5 2.8 3 3 12 6 mΩ A V nA µA S 13 24 nC nC nC nC ns ns ns ns 1.2 1.7 V A Note 1: Mounted on 1” x 1” FR4 Copper Board, 10 sec pulse width. Note 2: Pulse test: pulse width = 300µs Note 3: Guaranteed by design. Not subjected to production testing. 2 7126.2002.10.0.9 AAT7126 30V N-Channel Power MOSFET Typical Characteristics (TJ = 25ºC unless otherwise noted) Forward Characteristics ID (A) 5V 4.5V 10V 20 RDS(ON) / RDS(ON) at gate = 10 V 25 Normalized RDS(ON) 6V 4V 15 3.5V 10 2V 3V 5 0 0 1 2 3 4 3 3.5V 4V 4.5V 2 1 5V 6V 10V 0 5 0 5 10 15 VD (V) 20 25 4 5 ID (A) Transfer RDS(ON) vs. VG 25 100 5A 20 10A 60 ID (A) RDS(ON) (mΩ) 80 15A 40 20 15 10 5 0 0 0 2 4 6 8 10 0 1 2 3 VG (V) VG (V) Source to Drain Voltage Gate Charge Characteristics 100 10 Gate Voltage (V) 8 ISD (A) 10 1 0.1 0.4 0.6 0.8 VSD (V) 7126.2002.10.0.9 1 1.2 6 4 2 0 0 4 8 12 16 20 Gate Charge (nC) 3 AAT7126 30V N-Channel Power MOSFET Ordering Information Package Marking Part Number (Tape and Reel) SOP-8 7126 AAT7126IAS-T1 Note: Sample stock is generally held on all part numbers listed in BOLD. Package Information 6.00 ± 0.20 3.90 ± 0.10 SOP-8 4.90 ± 0.10 0.42 ± 0.09 × 8 1.27 BSC 45° 4° ± 4° 0.175 ± 0.075 1.55 ± 0.20 0.375 ± 0.125 0.235 ± 0.045 0.825 ± 0.445 All dimensions in millimeters. AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed. Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 4 7126.2002.10.0.9