ANALOGICTECH AAT7126IAS-T1

AAT7126
30V N-Channel Power MOSFET
General Description
Features
The AAT7126 30V N-Channel Power MOSFET is a
member of AnalogicTech™'s TrenchDMOS™
product family. Using the ultra-high density proprietary TrenchDMOS technology, this product
demonstrates high power handling and small size.
•
•
•
Applications
Dual SOP-8 Package
Battery-powered portable equipment
Laptop computers
Desktop computers
DC/DC converters
Absolute Maximum Ratings
Symbol
VDS
VGS
Top View
Description
D1
D2
D2
8
7
6
5
1
S1
2
G1
3
S2
4
G2
Value
Drain-Source Voltage
Gate-Source Voltage
TA = 25°C
TA = 70°C
Continuous Drain Current @ TJ=150°C
IDM
IS
Pulsed Drain Current
Continuous Source Current (Source-Drain Diode) 1
TA = 25°C
Maximum Power Dissipation 1
TA = 70°C
Operating Junction and Storage Temperature Range
TJ, TSTG
D1
(TA=25°C unless otherwise noted)
ID
PD
Preliminary Information
•
•
•
•
VDS(MAX) = 30V
ID(MAX) 1 = 6.8A @ 25°C
Low RDS(ON):
• 26 mΩ @VGS = 10V
• 41 mΩ @ VGS = 4.5V
1
Units
30
±20
±6.8
±5.4
±24
1.7
2.0
1.25
-55 to 150
°C
Value
Units
100
62.5
35
°C/W
°C/W
°C/W
V
A
W
Thermal Characteristics
Symbol
RθJA
RθJA2
RΘJC
7126.2002.10.0.9
Description
Typical Junction-to-Ambient steady state, one FET on
Industry Standard Junction-to-Ambient Figure, t < 10 sec.
Typical Junction-to-Case, one FET on
1
AAT7126
30V N-Channel Power MOSFET
Electrical Characteristics
Symbol
(TJ=25°C unless otherwise noted)
Description
Conditions
DC Characteristics
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Drain-Source ON-Resistance
ID(ON)
VGS(th)
IGSS
On-State Drain Current 2
Gate Threshold Voltage
Gate-Body Leakage Current
IDSS
2
Drain Source Leakage Current
gfs
Forward Transconductance 2
Dynamic Characteristics 3
QG
Total Gate Charge
QGT
Total Gate Charge
QGS
Gate-Source Charge
QGD
Gate-Drain Charge
tD(ON)
Turn-ON Delay
tR
Turn-ON Rise Time
tD(OFF)
Turn-OFF Delay
tF
Turn-OFF Fall Time
Source-Drain Diode Characteristics
VSD
Source-Drain Forward Voltage
IS
Continuous Diode Current
VGS=0V, ID=250µA
VGS=10V, ID=6.8A
VGS=4.5V, ID=5.4A
VGS=10V ,VDS=5V (Pulsed)
VGS=VDS, ID=250µA
VGS=±20V, VDS=0V
VGS=0V,VDS=30V
VGS=0V,VDS=30V, TJ=70°C
VDS=5V, ID=6.8A
VDS=15V, ID=6.8A, VGS=5V
VDS=15V, ID=6.8A, VGS=10V
VDS=15V, ID=6.8A, VGS=10V
VDS=15V, ID=6.8A, VGS=10V
VDD=15V, VGS=10V, RD=3Ω, RG=6Ω
VDD=15V, VGS=10V, RD=3Ω, RG=6Ω
VDD=15V, VGS=10V, RD=3Ω, RG=6Ω
VDD=15V, VGS=10V, RD=3Ω, RG=6Ω
2
VGS=0, IS=1.7A
Min
Typ
Max
30
Units
V
19.5
32
26
41
24
1.0
±100
1
5
14
8.6
16
2.5
2.8
3
3
12
6
mΩ
A
V
nA
µA
S
13
24
nC
nC
nC
nC
ns
ns
ns
ns
1.2
1.7
V
A
Note 1: Mounted on 1” x 1” FR4 Copper Board, 10 sec pulse width.
Note 2: Pulse test: pulse width = 300µs
Note 3: Guaranteed by design. Not subjected to production testing.
2
7126.2002.10.0.9
AAT7126
30V N-Channel Power MOSFET
Typical Characteristics
(TJ = 25ºC unless otherwise noted)
Forward Characteristics
ID (A)
5V
4.5V
10V
20
RDS(ON) / RDS(ON) at gate = 10 V
25
Normalized RDS(ON)
6V
4V
15
3.5V
10
2V
3V
5
0
0
1
2
3
4
3
3.5V
4V
4.5V
2
1
5V
6V
10V
0
5
0
5
10
15
VD (V)
20
25
4
5
ID (A)
Transfer
RDS(ON) vs. VG
25
100
5A
20
10A
60
ID (A)
RDS(ON) (mΩ)
80
15A
40
20
15
10
5
0
0
0
2
4
6
8
10
0
1
2
3
VG (V)
VG (V)
Source to Drain Voltage
Gate Charge Characteristics
100
10
Gate Voltage (V)
8
ISD (A)
10
1
0.1
0.4
0.6
0.8
VSD (V)
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1
1.2
6
4
2
0
0
4
8
12
16
20
Gate Charge (nC)
3
AAT7126
30V N-Channel Power MOSFET
Ordering Information
Package
Marking
Part Number (Tape and Reel)
SOP-8
7126
AAT7126IAS-T1
Note: Sample stock is generally held on all part numbers listed in BOLD.
Package Information
6.00 ± 0.20
3.90 ± 0.10
SOP-8
4.90 ± 0.10
0.42 ± 0.09 × 8
1.27 BSC
45°
4° ± 4°
0.175 ± 0.075
1.55 ± 0.20
0.375 ± 0.125
0.235 ± 0.045
0.825 ± 0.445
All dimensions in millimeters.
AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work
rights, or other intellectual property rights are implied.
AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest
version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale
supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and
other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed.
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085
Phone (408) 737-4600
Fax (408) 737-4611
4
7126.2002.10.0.9