AAT7157 20V P-Channel Power MOSFET General Description Features The AAT7157 low threshold 20V, dual P-Channel MOSFET is a member of AnalogicTech™'s TrenchDMOS™ product family. Using an ultra-high density proprietary TrenchDMOS technology the AAT7157 is designed for use as a load switch in battery powered applications and protection in battery packs. • • • VDS(MAX) = -20V ID(MAX) 1 = -5.8A @ 25°C Low RDS(ON): • 36 mΩ @ VGS = -4.5V • 62 mΩ @ VGS = -2.5V Dual SOP-8L Package Applications • • Top View Battery Packs Battery-powered portable equipment Absolute Maximum Ratings Symbol VDS VGS D1 D2 D2 8 7 6 5 1 S1 2 G1 3 S2 4 G2 (TA=25°C unless otherwise noted) Description Value Drain-Source Voltage Gate-Source Voltage TA = 25°C TA = 70°C ID Continuous Drain Current @ TJ=150°C IDM IS Pulsed Drain Current 2 Continuous Source Current (Source-Drain Diode) PD Maximum Power Dissipation TJ, TSTG D1 1 1 TA = 25°C TA = 70°C 1 Operating Junction and Storage Temperature Range Units -20 ±12 ±5.8 ±4.6 ±24 -1.5 2.0 1.25 -55 to 150 °C Value Units 100 62.5 35 °C/W V A W Thermal Characteristics Symbol RθJA RθJA2 RθJF 7157.2004.04.1.0 Description Typical Junction-to-Ambient steady state Maximum Junction-to-Ambient t<10 seconds Typical Junction-to-Foot 1 1 1 1 AAT7157 20V P-Channel Power MOSFET Electrical Characteristics Symbol Description (TJ=25°C unless otherwise noted) Conditions DC Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250µA VGS=-4.5V, ID=-5.8A RDS(ON) Drain-Source ON-Resistance 2 VGS=-2.5V, ID=-4.4A ID(ON) On-State Drain Current 2 VGS=-4.5V, VDS=5V (Pulsed) VGS(th) Gate Threshold Voltage VGS=VDS, ID=-250µA IGSS Gate-Body Leakage Current VGS=±12V, VDS=0V VGS=0V, VDS=-20V IDSS Drain Source Leakage Current VGS=0V, VDS=-16V, TJ=70°C 3 gfs Forward Transconductance 2 VDS=-5V, ID=-5.8A 3 Dynamic Characteristics QG Total Gate Charge VDS=-15V, RD=2.6Ω, VGS=-4.5V QGS Gate-Source Charge VDS=-15V, RD=2.6Ω, VGS=-4.5V QGD Gate-Drain Charge VDS=-15V, RD=2.6Ω, VGS=-4.5V tD(ON) Turn-ON Delay VDS=-15V, RD=2.6Ω, VGS=-4.5V, tR Turn-ON Rise Time VDS=-15V, RD=2.6Ω, VGS=-4.5V, tD(OFF) Turn-OFF Delay VDS=-15V, RD=2.6Ω, VGS=-4.5V, tF Turn-OFF Fall Time VDS=-15V, RD=2.6Ω, VGS=-4.5V, Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage 2 VGS=0, IS=-5.8A IS Continuous Diode Current 1 Min Typ Max -20 V 29 49 36 62 -24 -0.6 ±100 -1 -5 12 RG=6Ω RG=6Ω RG=6Ω RG=6Ω Units mΩ A V nA µA S 14 2.3 5.5 10 37 36 52 nC ns -1.5 -1.5 V A Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10 second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design, however RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. Note 2: Pulse test: Pulse Width = 300 µs Note 3: Guaranteed by design. Not subject to production testing. 2 7157.2004.04.1.0 AAT7157 20V P-Channel Power MOSFET Typical Characteristics (TJ = 25ºC unless otherwise noted) Output Characteristics 24 4V 3.5V 5V 4.5V Transfer Characteristics 24 -55°C VD=VG 3V 18 25°C 18 125°C ID (A) IDS (A) 2.5V 12 12 2V 6 6 1.5V 0 0 0 0 0.5 1 1.5 2 2.5 1 2 3 VDS (V) On-Resistance vs. Drain Current 5 120 ID = 5.8A VGS = 2.5 V 60 100 RDS(ON) (mΩ) 50 RDS(ON) (mΩ) 4 On-Resistance vs. Gate to Source Voltage 70 40 30 VGS = 4.5 V 20 80 60 40 20 10 0 0 0 4 8 12 16 20 0 24 1 2 On-Resistance vs. Junction Temperature 0.5 VGS = 4.5V ID = 6.5A VGS(th) Variance (V) 0.4 1.2 1.1 1.0 0.9 0.8 5 ID = 250µA 0.3 0.2 0.1 0 -0.1 -0.2 0.7 -0.3 -50 0.6 -50 4 Threshold Voltage 1.4 1.3 3 VGS (V) ID (A) Normalized RDS(ON) 3 VGS (V) -25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150 TJ (°C) TJ (°C) 7157.2004.04.1.0 3 AAT7157 20V P-Channel Power MOSFET Typical Characteristics (TJ = 25ºC unless otherwise noted) Gate Charge Source-Drain Diode Forward Voltage 100 5 VD=15V ID=5.8A 4 TJ = 150°C IS (A) VGS (V) 10 3 2 TJ = 25°C 1 1 0.1 0 0 2 4 6 8 10 12 14 16 0 0.2 0.4 0.6 0.8 1 1.2 VSD (V) QG, Charge (nC) Capacitance Capacitance (pF) 2000 1600 Ciss 1200 800 Coss 400 Crss 0 0 5 10 15 20 VDS (V) 4 7157.2004.04.1.0 AAT7157 20V P-Channel Power MOSFET Ordering Information Package Marking Part Number (Tape and Reel) SOP-8 7157 AAT7157IAS-T1 Note: Sample stock is generally held on all part numbers listed in BOLD. Package Information 6.00 ± 0.20 3.90 ± 0.10 SOP-8 4.90 ± 0.10 0.42 ± 0.09 × 8 1.27 BSC 45° 4° ± 4° 0.175 ± 0.075 1.55 ± 0.20 0.375 ± 0.125 0.235 ± 0.045 0.825 ± 0.445 All dimensions in millimeters. 7157.2004.04.1.0 5 AAT7157 20V P-Channel Power MOSFET AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed. Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 6 7157.2004.04.1.0