APM2317A P-Channel Enhancement Mode MOSFET Pin Description Features • -20V/-4.5A , RDS(ON)=28mΩ (typ.) @ VGS=-4.5V RDS(ON)=38mΩ (typ.) @ VGS=-2.5V RDS(ON)=55mΩ (typ.) @ VGS=-1.8V • • • Super High Dense Cell Design Top View of SOT-23 Reliable and Rugged Lead Free Available (RoHS Compliant) S Applications • G Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems D P-Channel MOSFET Ordering and Marking Information Package Code A : SOT-23 Operating Junction Temp. Range C : -55 to 150° C Handling Code TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM2317 Lead Free Code Handling Code Temp. Range Package Code APM2317A : M17X XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2006 1 www.anpec.com.tw APM2317A Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±12 ID* Continuous Drain Current IDM* 300µs Pulsed Drain Current IS* Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage Temperature Range PD* Maximum Power Dissipation RθJA* Unit V -4.5 VGS=-4.5V A -18 A -1 150 °C -55 to 150 TA=25°C 0.83 TA=100°C 0.3 Thermal Resistance-Junction to Ambient W °C/W 150 Note: *Surface Mounted on 1in2 pad area, t ≤ 10sec. Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) a VSD a Gate Leakage Current VGS=±12V, VDS=0V Gate Charge Characteristics Qg Total Gate Charge Typ. Max. -20 -1 -30 -0.5 -0.7 µA -1 V ±100 nA VGS=-4.5V, IDS=-4.5A 28 35 VGS=-2.5V, IDS=-2.5A 38 50 VGS=-1.8V, IDS=-2A 55 75 -0.7 -1.3 14 20 ISD=-1A, VGS=0V Unit V TJ=85°C VDS=VGS, IDS=-250µA Diode Forward Voltage Min. VDS=-16V, VGS=0V Gate Threshold Voltage Drain-Source On-state Resistance APM2317A mΩ V b Qgs Gate-Source Charge Qgd Gate-Drain Charge Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2006 VDS=-10V, VGS=-4.5V, IDS=-4.5A 2.1 nC 4.7 2 www.anpec.com.tw APM2317A Electrical Characteristics (Cont.) Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM2317A Min. Typ. Max. Unit b Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time trr Reverse Recovery Time qrr Reverse Recovery Charge VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-10V, Frequency=1.0MHz VDD=-10V, RL=10Ω, IDS=-1A, VGEN=-4.5V, RG=6Ω ISD=-4.5A, dlSD/dt =100A/µs Ω 7 1520 pF 225 165 6 12 13 24 86 156 42 77 ns 21 ns 9 nC Notes: a : Pulse test ; pulse width≤300 µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2006 3 www.anpec.com.tw APM2317A Typical Characteristics Drain Current Power Dissipation 5.0 0.9 4.5 0.8 4.0 -ID - Drain Current (A) 1.0 Ptot - Power (W) 0.7 0.6 0.5 0.4 0.3 3.5 3.0 2.5 2.0 1.5 1.0 0.2 0.5 0.1 o TA=25 C,VG=-4.5V o 0.0 TA=25 C 0 20 40 0.0 60 80 100 120 140 160 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 2 Normalized Transient Thermal Resistance Rd s(o n) Lim it -ID - Drain Current (A) 20 Tj - Junction Temperature (°C) 50 10 0 300µs 1ms 1 10ms 100ms 0.1 1s DC o T =25 C 0.01 A 0.01 0.1 1 10 100 -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2006 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 1E-3 0.01 Mounted on 1in pad o RθJA : 150 C/W 0.1 1 10 100 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM2317A Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 100 18 VGS= -3, -4, -5, -6, -7, -8, -9, -10V -2V 14 -ID - Drain Current (A) 90 RDS(ON) - On - Resistance (mΩ) 16 12 10 8 6 -1.5V 4 2 80 VGS=1.8V 70 60 50 VGS=2.5V 40 VGS=4.5V 30 20 10 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 3 6 9 -ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 18 1.8 IDS = -250µA ID= -4.5A 1.6 Normalized Threshold Voltage 70 RDS(ON) - On - Resistance (mΩ) 15 -VDS - Drain - Source Voltage (V) 80 60 50 40 30 20 10 0 12 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 2 3 4 5 6 7 8 9 0.0 -50 -25 10 -VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2006 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM2317A Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 20 1.8 VGS = -4.5V IDS = -4.5A 10 o Tj=150 C 1.4 -IS - Source Current (A) Normalized On Resistance 1.6 1.2 1.0 0.8 o Tj=25 C 1 0.6 o RON@Tj=25 C: 28mΩ 0.4 -50 -25 0 25 50 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 75 100 125 150 Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Capacitance Gate Charge 2100 5.0 Frequency=1MHz VDS= -10V 4.5 ID = -4.5A -VGS - Gate-source Voltage (V) C - Capacitance (pF) 1800 Ciss 1500 1200 900 600 300 Coss 0 4 8 12 16 3.0 2.5 2.0 1.5 1.0 0.0 20 0 2 4 6 8 10 12 14 16 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2006 3.5 0.5 Crss 0 4.0 6 www.anpec.com.tw APM2317A Packaging Information SOT-23 D B 3 E H 2 1 e A L A1 Dim A A1 B C D E e H L C Millimeters Min. 1.00 0.00 0.35 0.10 2.70 1.40 Inches Max. 1.30 0.10 0.51 0.25 3.10 1.80 Min. 0.039 0.000 0.014 0.004 0.106 0.055 Max. 0.051 0.004 0.020 0.010 0.122 0.071 0.075/0.083 BSC. 0.094 0.118 0.015 1.90/2.1 BSC. 2.40 0.37 Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2006 3.00 7 www.anpec.com.tw APM2317A Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP Critical Zone T L to T P Temperature Ramp-up TL tL Tsmax Tsmin Ramp-down ts Preheat 25 t 25 °C to Peak Tim e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2006 8 www.anpec.com.tw APM2317A Classification Reflow Profiles (Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures 3 3 Package Thickness Volume mm Volume mm <350 ≥350 <2.5 m m 240 +0/-5°C 225 +0/-5°C ≥2.5 m m 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Temperatures 3 3 3 Package Thickness Volum e m m Volume mm Volume mm <350 350-2000 >2000 <1.6 m m 260 +0°C* 260 +0°C* 260 +0°C* 1.6 m m – 2.5 m m 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 m m 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E P Po D P1 Bo F W Ao Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2006 D1 9 Ko www.anpec.com.tw APM2317A Carrier Tape & Reel Dimensions T2 J C A B T1 Application SOT-23 A B C J 178±1 60 ± 1.0 12.0 F D D1 Po 3.5 ± 0.05 1.5 +0.1 φ0.1MIN 4.0 T1 P E 1.4 W 8.0+ 0.3 - 0.3 4.0 1.75 P1 Ao Bo Ko t 2.0 ± 0.05 3.1 3.0 1.3 0.2±0.03 2.5 ± 0.15 9.0 ± 0.5 T2 (mm) Cover Tape Dimensions Application SOT- 23 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2006 10 www.anpec.com.tw