APM1402S N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/0.8A , RDS(ON)=190mΩ(typ.) @ VGS=4.5V RDS(ON)=310mΩ(typ.) @ VGS=2.5V • • • Super High Dense Cell Design Reliable and Rugged Top View of SC-70 Lead Free Available (RoHS Compliant) D Applications • Power Management in Notebook Computer, G Portable Equipment and Battery Powered Systems S N-Channel MOSFET Ordering and Marking Information Package Code S : SC-70 Operating Junction Tem p. Range C : -55 to 150 ° C Handling Code TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM1402 Lead Free Code Handling Code Tem p. Range Package Code APM1402 S : 02 Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 1 www.anpec.com.tw APM1402S Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±8 V ID* Continuous Drain Current IDM* Pulsed Drain Current IS* Diode Continuous Forward Current 0.3 TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range PD* Maximum Power Dissipation RθJA* Unit 0.8 VGS=4.5V A 3 A °C -55 to 150 TA=25°C 0.34 TA=100°C 0.13 Thermal Resistance-Junction to Ambient W °C/W 360 Note: 2 *Surface Mounted on 1in pad area, t ≤ 10sec. Electrical Characteristics Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) VSD a a (TA = 25°C unless otherwise noted) Test Condition VGS=0V, IDS=250µA Zero Gate Voltage Drain Current VDS=16V, VGS=0V Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±8V, VDS=0V Drain-Source On-state Resistance Diode Forward Voltage APM1402S Min. Typ. Max. 20 0.5 Unit V 0.75 1 µA 1.2 V ±10 µA VGS=4.5V, IDS=1.2A 190 250 VGS=2.5V, IDS=0.6A 310 410 ISD=0.3A, VGS=0V 0.8 1.3 mΩ V b Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V, VDS=15V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω Turn-off Fall Time Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 2 131 pF 30 15 5 10 8 12 9.6 15 5 15 ns www.anpec.com.tw APM1402S Electrical Characteristics (Cont.) Symbol Parameter Gate Charge Characteristics Qg Total Gate Charge (TA = 25°C unless otherwise noted) Test Condition APM1402S Min. Typ. Max. 5.5 7.2 Unit b Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=10V, VGS=4.5V, IDS=0.8A nC 0.6 0.84 Notes: a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 3 www.anpec.com.tw APM1402S Typical Characteristics Drain Current 0.40 1.0 0.32 0.8 ID - Drain Current (A) Ptot - Power (W) Power Dissipation 0.24 0.16 0.08 0.6 0.4 0.2 o 0.00 o TA=25 C 0 20 40 60 80 0.0 100 120 140 160 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance it im on )L s( 300µs Rd ID - Drain Current (A) 0 Tj - Junction Temperature (°C) 5 1 TA=25 C, VG=4.5V 1ms 10ms 0.1 100ms 1s DC o T =25 C 0.01 A 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 2 Mounted on 1in pad o RθJA : 360 C/W Single Pulse 0.01 1E-4 1E-3 0.01 50 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 2 0.1 10 100 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM1402S Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 5 0.45 VGS= 4, 5, 6, 7, 8, 9, 10V VGS=2.5V 0.40 RDS(ON) - On - Resistance (Ω) ID - Drain Current (A) 4 3V 3 2.5V 2 2V 1 0 1 2 0.30 0.25 VGS=4.5V 0.20 0.15 0.10 1.5V 0 0.35 3 4 0.05 5 0 1 2 3 4 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 5 1.8 5 IDS =250µA Normalized Threshold Voltage 1.6 ID - Drain Current (A) 4 3 2 o Tj=125 C 1 o o Tj=-55 C Tj=25 C 0 0.0 0.5 1.0 1.4 1.2 1.0 0.8 0.6 0.4 0.2 1.5 2.0 2.5 3.0 3.5 0.0 -50 -25 4.0 VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM1402S Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 2.0 5 VGS = 4.5V IDS = 0.8A o Tj=150 C 1.6 IS - Source Current (A) Normalized On Resistance 1.8 1.4 1.2 1.0 0.8 0.6 o Tj=25 C 1 0.4 RON@Tj = 25°C : 190m Ω 0.2 -50 -25 0 25 50 75 0.1 0.0 100 125 150 0.4 0.8 1.2 1.6 2.0 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance Gate Charge 5 250 Frequency=1MHz VDS= 10V VGS - Gate-source Voltage (V) IDS= 0.8A C - Capacitance (pF) 200 150 Ciss 100 50 Coss 4 3 2 1 Crss 0 0 4 8 12 16 0 20 1 2 3 4 5 6 7 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 0 6 www.anpec.com.tw APM1402S Packaging Information SC-70 D £c e1 e L E1 E L1 b 0.20 C A1 A2 Symbol A Dimens ions In M illim et ers M in. M ax. 0.900 1.100 A Dimens ions In Inches M in. M ax. 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 e e1 0.650T YP 1.200 L 0.096 0.026T YP 1.400 0.047 0.525RE F 0.055 0.021PE F L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 7 www.anpec.com.tw APM1402S Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP C ritical Zone T L to T P T e m p e ra tu re R am p-up TL tL T sm ax T sm in R am p-down ts Preheat 25 t 25 °C to Peak T im e Classificatin Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Large Body Small Body Average ramp-up rate 3°C/second max. (TL to TP) Preheat - Temperature Min (Tsmin) 100°C - Temperature Mix (Tsmax) 150°C - Time (min to max)(ts) 60-120 seconds Tsmax to TL - Ramp-up Rate Tsmax to TL - Temperature(TL) 183°C - Time (tL) 60-150 seconds Peak Temperature(Tp) 225 +0/-5°C 240 +0/-5°C Time within 5°C of actual Peak 10-30 seconds 10-30 seconds Temperature(tp) Ramp-down Rate 6°C/second max. 6 minutes max. Time 25°C to Peak Temperature Pb-Free Assembly Large Body Small Body 3°C/second max. 150°C 200°C 60-180 seconds 3°C/second max 217°C 60-150 seconds 245 +0/-5°C 250 +0/-5°C 10-30 seconds 20-40 seconds 6°C/second max. 8 minutes max. Note: All temperatures refer to topside of the package. Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 8 www.anpec.com.tw APM1402S Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t D P Po E P1 Bo F W Ao D1 Ko T2 J C A B T1 Application A 178±1 SC-70 F B C J T1 14.4 ± 0.4 13.0 + 0.2 1.15 ± 0.1 12. ±0.2 D D1 Po P1 T2 P E 2.8± 0.2 W 8.0+ 0.3 - 0.1 4 ± 0.1 1.75± 0.1 Ao Bo Ko t 3.5 ± 0.05 1.55± 0.05 1.00 +0.25 4.0 ± 0.1 2.0 ± 0.05 2.4 ± 0.1 2.4± 0.1 1.19± 0.1 0.25±0.013 Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 9 www.anpec.com.tw APM1402S Cover Tape Dimensions Application SC- 70 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.2 - Mar., 2005 10 www.anpec.com.tw