AP2761P-A Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G ▼ RoHS Compliant BVDSS 650V RDS(ON) 1Ω ID 10A S Description The TO-220 package is universally preferred for all commercialindustrial applications. The device is suited for DC-DC ,AC-DC converters for power applications. G D TO-220 S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID@TC=25℃ Continuous Drain Current, V GS @ 10V 10 A ID@TC=100℃ Continuous Drain Current, V GS @ 10V 4.4 A 18 A 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 104 W Linear Derating Factor 0.8 W/℃ IAR Avalanche Current 10 A TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Thermal Resistance Junction-case Max. 1.2 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W Data & specifications subject to change without notice 200705051-1/4 AP2761P-A o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Units 650 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.6 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3.5A - - 1 Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=3.5A - 4.5 - S VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150 C) VDS=480V, VGS=0V - - 100 uA Gate-Source Leakage VGS=±30V - - ±100 nA ID=10A - 53 85 nC o IDSS Drain-Source Leakage Current (Tj=25 C) o IGSS 3 VGS=0V, ID=1mA Min. Qg Total Gate Charge Qgs Gate-Source Charge VDS=520V - 10 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 15 - nC 3 td(on) Turn-on Delay Time VDD=320V - 16 - ns tr Rise Time ID=10A - 20 - ns td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 82 - ns tf Fall Time RD=32Ω - 36 - ns Ciss Input Capacitance VGS=0V - 2770 4430 pF Coss Output Capacitance VDS=15V - 320 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 8 - pF Min. Typ. IS=10A, VGS=0V - - 1.5 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 3 3 Test Conditions Max. Units trr Reverse Recovery Time IS=10A, VGS=0V, - 610 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 8.64 - µC Notes: 1.Pulse width limited by safe operating area. o 2.Starting Tj=25 C , VDD=50V , L=1.2mH , RG=25Ω , IAS=10A. 3.Pulse width <300us , duty cycle <2%. 2/4 AP2761P-A 9 12 10V 6.0V 5.5V o 10V 6.0V 5.5V 5.0V T C =150 C 9 ID , Drain Current (A) ID , Drain Current (A) T C =25 o C 5.0V 6 6 3 V G =4.0V 3 V G =4.0V 0 0 0 5 10 15 20 0 25 10 20 30 40 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 2.4 I D =3.5A V G =10V 1.8 Normalized RDS(ON) Normalized BVDSS (V) 1.1 1 1.2 0.6 0.9 0 0.8 -50 0 50 100 -50 150 T j , Junction Temperature ( o C) 100 5 10 4 T j = 25 o C o T j = 150 C 50 100 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature VGS(th) (V) IS (A) Fig 3. On-Resistance v.s. Gate Voltage 1 0 T j , Junction Temperature ( o C) 0.1 3 2 0.01 1 0.1 0.3 0.5 0.7 0.9 1.1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.3 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP2761P-A f=1.0MHz 10000 I D =10A C iss 12 V DS =330V V DS =410V V DS =520V C (pF) VGS , Gate to Source Voltage (V) 16 8 C oss 100 4 C rss 0 1 0 20 40 60 80 1 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 Normalized Thermal Response (Rthjc) Duty factor=0.5 10 ID (A) 10us 100us 1 1ms 10ms o T C =25 C Single Pulse 0.2 0.1 0.1 0.05 0.02 PDM 0.01 t T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 100ms 0.01 0 1 10 100 1000 10000 0.00001 0.0001 Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) V DS , Drain-to-Source Voltage (V) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4/4