BPV11 Vishay Telefunken Silicon NPN Phototransistor Description BPV11 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ plastic package. Due to its waterclear epoxy lens the device is sensitive to visible and near infrared radiation. The viewing angle of ±15° makes it insensible to ambient straylight. A base terminal is available to enable biasing and sensitivity control. Features D D D D 12785 Very high photo sensitivity Standard T–1¾ (ø 5 mm) package with clear lens Angle of half sensitivity ϕ = ± 15° Base terminal available Applications Detector for industrial electronic circuitry, measurement and control Absolute Maximum Ratings Tamb = 25_C Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Document Number 81504 Rev. 3, 20-May-99 Test Conditions x tp/T = 0.5, tp 10 ms Tamb 47 °C x t x 5 s, 2 mm from body Symbol VCBO VCEO VEBO IC ICM Ptot Tj Tstg Tsd RthJA Value 80 70 5 50 100 150 100 –55...+100 260 350 Unit V V V mA mA mW °C °C °C K/W www.vishay.de • FaxBack +1-408-970-5600 1 (6) BPV11 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Collector Emitter Breakdown Voltage Collector Dark Current DC Current Gain Collector Emitter Capacitance Collector Base Capacitance Collector Light Current Test Conditions IC = 1 mA Symbol V(BR)CE Min 70 Typ Max Unit V 1 450 15 19 10 50 nA O VCE = 10 V, E = 0 VCE = 5 V, IC = 5 mA, E = 0 VCE = 0 V, f = 1 MHz, E=0 VCB = 0 V, f = 1 MHz, E=0 Ee=1 mW/cm2, l=950 nm, VCE=5 V Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Collector Emitter Saturation Ee=1 mW/cm2, l=950 nm, Voltage IC=1 mA Turn–On Time VS=5 V, IC=5 mA, RL=100 W Turn–Off Time VS=5 V, IC=5 mA, RL=100 W Cut–Off Frequency VS=5 V, IC=5 mA, RL=100 W ICEO hFE CCEO CCBO Ica 3 ϕ pF pF mA VCEsat ±15 850 620...980 130 ton 6 ms toff 5 ms fc 110 kHz lp l0.5 300 deg nm nm mV Typical Characteristics (Tamb = 25_C unless otherwise specified) 104 I CEO – Collector Dark Current ( nA ) P tot – Total Power Dissipation ( mW ) 200 160 120 RthJA 80 40 VCE = 10V 102 101 100 0 0 94 8300 103 20 40 60 80 Tamb – Ambient Temperature ( °C ) Figure 1. Total Power Dissipation vs. Ambient Temperature www.vishay.de • FaxBack +1-408-970-5600 2 (6) 100 20 94 8249 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 2. Collector Dark Current vs. Ambient Temperature Document Number 81504 Rev. 3, 20-May-99 BPV11 Vishay Telefunken 800 I ca rel – Relative Collector Current 2.0 1.8 B – Amplification VCE=5V Ee=1mW/cm2 l=950nm 1.6 1.4 1.2 1.0 VCE=5V 600 400 200 0.8 0.6 0 20 40 60 80 Tamb – Ambient Temperature ( °C ) 94 8239 0 0.01 100 Figure 3. Relative Collector Current vs. Ambient Temperature 10 1 VCE=5V l=950nm 0.1 0.01 0.01 f=1MHz 16 12 8 4 10 1 mW / cm2 ) 0.1 Ee 10 =1 mW/cm2 0.5 mW/cm2 0.2 mW/cm2 0.1 mW/cm2 1 0.05 mW/cm2 0.02 mW/cm2 0.1 0.1 1 10 VCE – Collector Emitter Voltage ( V ) Figure 5. Collector Light Current vs. Collector Emitter Voltage Document Number 81504 Rev. 3, 20-May-99 10 100 Figure 7. Collector Base Capacitance vs. Collector Base Voltage C CEO – Collector Emitter Capacitance ( pF ) l=950nm 1 VCB – Collector Base Voltage ( V ) 94 8246 100 Ica – Collector Light Current ( mA ) 100 20 Figure 4. Collector Light Current vs. Irradiance 94 8272 10 0 0.1 Ee – Irradiance ( 94 8244 1 Figure 6. Amplification vs. Collector Current CCBO – Collector Base Capacitance ( pF ) Ica – Collector Light Current ( mA ) 100 0.1 IC – Collector Current ( mA ) 94 8250 20 f=1MHz 16 12 8 4 0 100 0.1 94 8247 1 10 100 VCE – Collector Emitter Voltage ( V ) Figure 8. Collector Emitter Capacitance vs. Collector Emitter Voltage www.vishay.de • FaxBack +1-408-970-5600 3 (6) BPV11 0° 12 VCE=5V RL=100W l=950nm 10 8 S rel – Relative Sensitivity t on / t off – Turn on / Turn off Time ( m s ) Vishay Telefunken 6 ton 4 toff 2 10 ° 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0 0 4 8 12 16 IC – Collector Current ( mA ) 94 8253 S ( l ) rel – Relative Spectral Sensitivity Figure 9. Turn On/Turn Off Time vs. Collector Current 0.4 0.2 0 0.2 0.4 0.6 Figure 11. Relative Radiant Sensitivity vs. Angular Displacement 1.0 0.8 0.6 0.4 0.2 0 400 94 8348 0.6 94 8248 600 800 l – Wavelength ( nm ) 1000 Figure 10. Relative Spectral Sensitivity vs. Wavelength www.vishay.de • FaxBack +1-408-970-5600 4 (6) Document Number 81504 Rev. 3, 20-May-99 BPV11 Vishay Telefunken Dimensions in mm 9612200 Document Number 81504 Rev. 3, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 5 (6) BPV11 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de • FaxBack +1-408-970-5600 6 (6) Document Number 81504 Rev. 3, 20-May-99