AP6924GEY
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL MOSFET WITH SCHOTTKY
DIODE
K
▼ Low On-Resistance
S
▼ Fast Switching Characteristic
D
▼ Included Schottky Diode
20V
RDS(ON)
600mΩ
ID
A
G A
SOT-26
BVDSS
1A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D
A
S
K
G
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage (MOSFET)
20
V
VKA
Reverse Voltage (Schottky)
20
V
VGS
Gate-Source Voltage (MOSFET)
±6
V
ID@TA=25℃
Continuous Drain Current3 (MOSFET)
1
A
0.8
A
8
A
0.5
A
ID@TA=70℃
3
Continuous Drain Current (MOSFET)
1
IDM
Pulsed Drain Current (MOSFET)
IF
Average Forward Current (Schottky)
1
IFM
Pulsed Forward Current (Schottky)
2
A
PD@TA=25℃
Total Power Dissipation (MOSFET)
0.9
W
Total Power Dissipation (Schottky)
0.9
W
TSTG
Storage Temperature Range
-55 to 125
℃
TJ
Operating Junction Temperature Range
-55 to 125
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient 3 (MOSFET)
3
Thermal Resistance Junction-ambient (Schottky)
Data and specifications subject to change without notice
Value
Units
Max.
110
℃/W
Max.
110
℃/W
200301051
AP6924GEY
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=1A
-
-
600
mΩ
VGS=2.5V, ID=0.5A
-
-
850
mΩ
VDS=VGS, ID=250uA
0.5
-
1.2
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=5V, ID=600mA
-
1
-
S
o
VDS=20V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=16V ,VGS=0V
-
-
10
uA
Gate-Source Leakage
VGS=±6V
-
-
±10
uA
ID=600mA
-
1.3
2
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
0.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
0.5
-
nC
VDS=10V
-
21
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=600mA
-
53
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
100
-
ns
tf
Fall Time
RD=16.7Ω
-
125
-
ns
Ciss
Input Capacitance
VGS=0V
-
38
60
pF
Coss
Output Capacitance
VDS=10V
-
17
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
12
-
pF
Min.
Typ.
Max.
Unit
-
-
1.2
V
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Forward On Voltage
VSD
Test Conditions
IS=750mA, VGS=0V
Schottky Characteristics@Tj=25℃
Symbol
Parameter
Test Conditions
Max. Units
VF
Forward Voltage Drop
IF=500mA
-
-
0.5
V
Irm
Maximum Reverse Leakage Current
Vr=20V
-
-
100
uA
CT
Junction Capacitance
Vr=10V
-
21
-
pF
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t<5sec ; 180℃/W when mounted on min. copper pad.
AP6924GEY
MOSFET
2.5
2.5
ID , Drain Current (A)
T A =125 C
2.0
ID , Drain Current (A)
T A =25 C
2.0
1.5
2.5V
1.0
V G =2.0V
0.5
5.0V
4.5V
3.5V
o
5.0V
4.5V
3.5V
o
1.5
2.5V
1.0
V G =2.0V
0.5
0.0
0.0
0
0.5
1
1.5
2
2.5
0.0
0.5
V DS , Drain-to-Source Voltage (V)
1.0
1.5
2.0
2.5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.9
1250
I D = 0.5A
1050
I D =1A
V G =4.5V
1.6
Normalized RDS(ON)
RDS(ON) (mΩ)
T A =25 o C
850
650
1.3
1.0
0.7
450
0.4
250
1
2
3
4
-50
5
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.0
2.0
T j =125 o C
IS(A)
0.6
T j =25 o C
0.4
Normalized VGS(th) (V)
0.8
1.5
1.0
0.5
0.2
0.0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Reverse Diode
150
AP6924GEY
f=1.0MHz
12
100
V DS =10V
V DS =12V
V DS =16V
8
C (pF)
VGS , Gate to Source Voltage (V)
I D =0.6A
C iss
4
C oss
C rss
0
10
0
0.5
1
1.5
2
2.5
3
1
3
5
7
9
11
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
Duty factor=0.5
Normalized Thermal Response (Rthja)
100us
1ms
ID (A)
1
10ms
100ms
0.1
1s
DC
o
T A =25 C
Single Pulse
0.01
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=180 oC/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
SCHOTTKY DIODE
1
1
IF , Forward Current (A)
IR , Reverse Current (mA)
10
20V
0.1
16V
0.01
0.001
T j = 1 25 o C
T j = 25 o C
0.1
25
50
75
100
125
o
T j , Junction Temperature ( C)
Fig 1. Reverse Leakage Current
v.s. Junction Temperature
0
0.2
0.4
0.6
V F , Forward Voltage Drop (V)
Fig 2. Forward Voltage Drop
0.8