AP4409GEM
Pb Free Plating Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
D
▼ Low On-resistance
D
D
▼ Fast Switching Characteristic
G
▼ RoHS Compliant
S
SO-8
S
BVDSS
-35V
RDS(ON)
7.5mΩ
ID
-14.5A
S
Description
D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
S
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such as
DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
-35
V
±20
V
3a
-14.5
A
3a
-12
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
-50
A
PD@TA=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3a
Max
Value
Unit
50
℃/W
200327063-1/4
AP4409GEM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-35
-
-
V
-
-0.02
-
V/℃
VGS=-10V, ID=-7A
-
-
7.5
mΩ
VGS=-4V, ID=-7A
-
-
15
mΩ
-0.8
-
-2
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance
VGS=0V, ID=-250uA
2
Max. Units
Gate Threshold Voltage
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=-10V, ID=-7A
-
13
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=-30V, VGS=0V
-
-
-10
uA
Drain-Source Leakage Current (Tj=70 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±20V
-
-
±30
uA
ID=-14A
-
55
90
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-30V
-
10
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
30
-
nC
VDS=-15V
-
18
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
160
-
ns
tf
Fall Time
RD=15Ω
-
110
-
ns
Ciss
Input Capacitance
VGS=0V
-
4100 6600
pF
Coss
Output Capacitance
VDS=-25V
-
860
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
770
-
pF
Min.
Typ.
IS=-14A, VGS=0V
-
-
-1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-14A, VGS=0V,
-
43
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
37
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board （a）, t <10sec
(a) 1 in 2 pad of
2 oz copper
(b) 125℃
℃/W when
mounted on a 0.003
in2 pad of 2 oz copper
2/4
AP4409GEM
50
50
- 10V
-5.0 V
-4.5 V
-3.0 V
-ID , Drain Current (A)
40
40
30
20
V G = - 2.5 V
30
V G = - 2.5 V
20
10
10
0
0
0
1
2
3
0
4
-V DS , Drain-to-Source Voltage (V)
1
2
3
4
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
26
ID=-7A
T A =25 ℃
Normalized RDS(ON)
21
RDS(ON\) (mΩ )
-10V
- 5.0 V
- 4.5 V
- 3.0 V
T A = 150 o C
-ID , Drain Current (A)
T A = 25 o C
16
I D =-7A
V G =-10V
1.4
1.0
11
0.6
6
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
14
12
1.4
o
Normalized -VGS(th) (V)
10
o
T j =150 C
T j =25 C
-IS(A)
8
6
4
1.0
0.6
2
0.2
0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP4409GEM
C iss
ID= -14A
V DS = - 30 V
12
C (pF)
-VGS , Gate to Source Voltage (V)
f=1.0MHz
10000
16
8
C oss
C rss
1000
4
100
0
0
30
60
90
1
120
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthja)
Duty factor=0.5
1ms
10
10ms
1
-ID (A)
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
0.01
0.2
0.1
0.1
0.05
0.02
PDM
0.01
t
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=125oC/W
Single Pulse
0.001
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
60
VG
-ID , Drain Current (A)
V DS =-5V
T j =25 o C
QG
T j =150 o C
40
-4.5V
QGS
QGD
20
Charge
Q
0
0
1
2
3
4
5
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4