AP9563GK
Pb Free Plating Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower Gate Charge
▼ Fast Switching Characteristic
S
BVDSS
-40V
RDS(ON)
40mΩ
ID
-6.8A
D
▼ RoHS Compliant
G
SOT-223
Description
D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
-40
V
±25
V
3
-6.8
A
3
-5.4
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
-30
A
PD@TA=25℃
Total Power Dissipation
2.8
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
45
℃/W
200914051-1/4
AP9563GK
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-40
-
-
V
-
-0.03
-
V/℃
VGS=-10V, ID=-6A
-
-
40
mΩ
VGS=-4.5V, ID=-4A
-
-
60
mΩ
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-6A
-
10
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=-40V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C)
VDS=-32V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±25V
-
-
±100
nA
ID=-6A
-
20
30
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance
o
IGSS
2
VGS=0V, ID=-250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-32V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
10
-
nC
VDS=-20V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
70
-
ns
tf
Fall Time
RD=20Ω
-
36
-
ns
Ciss
Input Capacitance
VGS=0V
-
1600 2560
pF
Coss
Output Capacitance
VDS=-25V
-
240
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
185
-
pF
Rg
Gate Resistance
f=1.0MHz
-
5.8
8.7
Ω
Min.
Typ.
IS=-2.2A, VGS=0V
-
-
-1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-6A, VGS=0V,
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
30
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 120 ℃/W when mounted on Min. copper pad.
2/4
AP9563GK
50
50
-10V
-7.0V
-5.0V
-4.5V
T A = 25 C
-ID , Drain Current (A)
40
TA=150 C
40
30
20
V G = - 3 .0V
10
30
20
V G = - 3 .0V
10
0
0
0
3
6
9
12
15
0
3
6
9
12
15
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
65
2.0
ID=-6A
V G =-10V
ID=-4A
T A =25 ℃
1.6
Normalized RDS(ON)
55
RDS(ON) (mΩ )
-10V
-7.0V
-5.0V
-4.5V
o
-ID , Drain Current (A)
o
45
1.2
0.8
35
0.4
25
3
5
7
9
-50
11
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
Normalized -VGS(th) (V)
6
-IS(A)
4
T j =150 o C
T j =25 o C
2
0
1.1
0.8
0.5
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP9563GK
f=1.0MHz
10000
I D = -6A
V DS = -32V
12
C (pF)
-VGS , Gate to Source Voltage (V)
16
8
C iss
1000
4
C oss
C rss
100
0
0
10
20
30
40
50
1
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
100us
10
1ms
10ms
1
100ms
1s
0.1
T A =25 o C
Single Pulse
Normalized Thermal Response (Rthja)
100
-ID (A)
13
-V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
0.01
t
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=120 oC/W
DC
0.01
0.001
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
VG
-ID , Drain Current (A)
V DS =-5V
T j =25 o C
20
QG
T j =150 o C
-4.5V
QGS
QGD
10
Charge
Q
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4