AP2303GN
Pb Free Plating Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Small Package Outline
D
▼ Surface Mount Device
BVDSS
-30V
RDS(ON)
240mΩ
ID
- 1.9A
S
SOT-23
Description
G
D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
- 30
V
± 20
V
3
-1.9
A
3
-1.5
A
Continuous Drain Current
Continuous Drain Current
1,2
IDM
Pulsed Drain Current
-10
A
PD@TA=25℃
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
90
℃/W
200407042
AP2303GN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-30
-
-
V
-
-0.1
-
V/℃
VGS=-10V, ID=-1.7A
-
-
240
mΩ
VGS=-4.5V, ID=-1.3A
-
-
460
mΩ
VDS=VGS, ID=-250uA
-1
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VGS=0V, ID=-250uA
VDS=-10V, ID=-1.7A
-
2
-
S
o
VDS=-30V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-30V, VGS=0V
-
-
-10
uA
Gate-Source Leakage
VGS= ± 20V
-
-
±100
nA
ID=-1.7A
-
6.2
-
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
2
Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-15V
-
1.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
0.3
-
nC
VDS=-15V
-
7.6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
8.2
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=-10V
-
17.5
-
ns
tf
Fall Time
RD=15Ω
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
230
-
pF
Coss
Output Capacitance
VDS=-15V
-
130.4
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
40
-
pF
Min.
Typ.
-
-
-1
A
-
-
-10
A
-
-
-1.2
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=-1.2V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
1
2
Forward On Voltage
IS=-1.25A, VGS=0V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
Max. Units
AP2303GN
10
10
o
T A =25 C
6
V G =-4.0V
4
-10V
-8.0V
-6.0V
-5.0V
8
-ID , Drain Current (A)
8
-ID , Drain Current (A)
o
T A =150 C
-10V
-8.0V
-6.0V
-5.0V
2
6
V G =-4.0V
4
2
0
0
0
1
2
3
4
0
5
-V DS , Drain-to-Source Voltage (V)
1
2
3
4
5
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
250
1.8
I D =-1.7A
1.6
I D =-1.3A
T A =25 ℃
Normalized R DS(ON)
V G = -10V
RDSON (mΩ )
200
150
1.4
1.2
1
0.8
0.6
100
3
5
7
9
-50
11
-V GS , Gate-to-Source Voltage (V)
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
3
1
2
-IF(A)
-VGS(th) (V)
10
T j =150 o C
0
T j =25 o C
1
0
0
0
0.1
0.3
0.5
0.7
0.9
1.1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.3
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP2303GN
14
f=1.0MHz
1000
-VGS , Gate to Source Voltage (V)
12
I D = -1.7A
V DS = -15V
10
C iss
C (pF)
8
6
C oss
100
4
C rss
2
0
10
0
2
4
6
8
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
10
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
1ms
1
10ms
0.1
100ms
1s
DC
T A =25 o C
Single Pulse
0.01
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.01
t
T
0.01
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 270℃
℃ /W
0.001
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q