AP2314GN
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 2.5V gate drive
▼ Lower on-resistance
D
▼ Surface mount package
BVDSS
20V
RDS(ON)
75mΩ
ID
3.5A
S
SOT-23
Description
G
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
D
The SOT-23 package is universally used for all commercial-industrial
applications.
G
S
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
20
V
±12
V
3
3.5
A
3
2.8
A
10
A
Continuous Drain Current , VGS @ 4.5V
Continuous Drain Current , VGS @ 4.5V
1,2
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
90
℃/W
201220041
AP2314GN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=3.5A
-
-
75
mΩ
VGS=2.5V, ID=1.2A
-
-
125
mΩ
VDS=VGS, ID=250uA
0.5
-
1.2
V
VDS=5V, ID=3A
-
7
-
S
Drain-Source Leakage Current (Tj=25 C)
VDS=20V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=16V ,VGS=0V
-
-
10
uA
Gate-Source Leakage
VGS=±12V
-
-
±100
nA
ID=3A
-
4
7
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
IGSS
2
VGS=0V, ID=250uA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
0.7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
2
-
nC
VDS=15V
-
6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
10
-
ns
tf
Fall Time
RD=15Ω
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
230
370
pF
Coss
Output Capacitance
VDS=20V
-
55
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
40
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.1
1.7
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=1.2A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=3A, VGS=0V,
-
16
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
8
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 270 ℃/W when mounted on Min. copper pad.
AP2314GN
15
15
5.0V
4.5V
3.0V
ID , Drain Current (A)
5.0V
4.5V
o
T A = 150 C
ID , Drain Current (A)
o
T A =25 C
10
2.5V
5
10
3.0 V
2.5V
5
V G = 1 .5V
V G = 1. 5V
0
0
0
1
2
0
3
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2
3
Fig 2. Typical Output Characteristics
100
1.6
I D =1.2A
I D = 3.5 A
V G =4.5V
1.4
o
Normalized R DS(ON)
T A =25 C
RDS(ON) (mΩ )
1
V DS , Drain-to-Source Voltage (V)
80
60
1.2
1.0
0.8
0.6
40
2
4
6
8
-50
10
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
0.8
Normalized VGS(th) (V)
3
2
IS(A)
o
o
T j =150 C
T j =25 C
1
0
0.7
0.6
0.5
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP2314GN
f=1.0MHz
1000
I D =3A
10
C iss
V DS =10V
V DS =12V
V DS =16V
8
6
C (pF)
VGS , Gate to Source Voltage (V)
12
100
C oss
4
C rss
2
0
10
0
2
4
6
8
1
5
9
13
17
21
25
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
Duty factor=0.5
10
ID (A)
1ms
1
10ms
0.1
100ms
1s
T A =25 o C
Single Pulse
DC
0.01
0.2
0.1
0.1
0.05
PDM
t
0.01
T
0.01
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 270℃
℃ /W
0.001
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
15
VG
ID , Drain Current (A)
V DS =5V
T j =25 o C
10
QG
T j =150 o C
4.5V
QGS
QGD
5
Charge
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Circuit
Q