AP1266 SILICON PIN DIODE PACKAGE STYLE -11 DESCRIPTION: The AP1266 is a Passivated Epitaxial Silicon PIN Diode in a Hermetically Sealed Glass Package Designed for Large Signal Switches. MAXIMUM RATINGS I 100 mA V 200 V PDISS 1.0 W @ TC = 25 C TJ -65 C to +175 C TSTG -65 C to +175 C TSOLD 200 C O O O O O O NONE CHARACTERISTICS SYMBOL O TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS VB IR = 10 µA CT V = 50 V f = 1.0 MHz 1.5 pF RS IF = 50 mA f = 100 MHz 0.6 Ohms TL IF = 10 mA I-REGION V 200 IR = 6.0 mA I-REGION WIDTH 3.0 µS 3.0 mS A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1