ULBM2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .280 4L STUD FEATURES: A • Common Base • PG = 10 dB at 2.0 W/470 MHz • Omnigold™ Metalization System 45° C E B E B MAXIMUM RATINGS J IC 0.75 A VCBO 36 V VCEO 16 V VCES VEBO C D E I F G H K #8-32 UNC DIM MINIMUM inches / mm inches / mm 36 V A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 4.0 V C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 PDISS 5 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 35 °C/W .130 / 3.30 .245 / 6.22 H .255 / 6.48 .640 / 16.26 I J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 ORDER CODE: ASI10675 TC = 25 °C NONETEST CONDITIONS SYMBOL .137 / 3.48 .572 / 14.53 F G CHARACTERISTICS MAXIMUM MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 25 mA 16 V BVCES IC = 5.0 mA 36 V BVEBO IE = 1.0 mA 4.0 V ICBO VCE = 15 V hFE VCE = 5.0 V Cob VCB = 12 V PG ηC VCC = 12.5 V IC = 100 mA 20 --- f = 1.0 MHz POUT = 2.0 W f = 470 MHz 10 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 mA --- --- 10 pF dB % REV. B 1/1