C1-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The C1-12 is Designed for 12.5 Volt supply. Applications from 450 to 512 MHz. PACKAGE STYLE .280 4L PILL A FEATURES: E • PG = 11 dB Typ. at 1.1 W/470 MHz • ηC = 65 % Typ. at 1.1 W/470 MHz • Omnigold™ Metalization System C ØB B E ØC MAXIMUM RATINGS D 250 mA IC E VCBO 36 V VCEO 28 V DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 MAXIMUM VEBO 4.0 V PDISS 5.0 W @ TC = 25 °C C .275 / 6.99 .285 / 7.24 D .004 / 0.10 .006 / 0.15 TJ -65 °C to +200 °C E .050 / 1.27 .060 . 1.52 F .118 / 3.00 .130 / 3.30 TSTG -65 °C to +150 °C θJC 35 °C/ W 1.055 / 26.80 B CHARACTERISTICS ORDER CODE: ASI TC = 25 °C NONETEST CONDITIONS SYMBOL F MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 5.0 mA 14.5 V BVCES IC = 5.0 mA 37 V BVEBO IE = 5.0 mA 4.0 V hFE VCE = 6.0 V COB VCB = 12 V PG ηC VCE = 12.5 V IC = 100 mA 10 f = 1.0 MHz POUT = 1.1 W f = 470 MHz 100 --- 3.0 pF 11 dB % 65 Pin = 0.1 W A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. 0 1/1