MRF421 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF421 is Designed for High linear amplifier applications from 2.0 to 30 MHZ. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 12 dB min. at 100 W/30 MHz • IMD3 = -30 dBc max. at 100 W (PEP) • Omnigold™ Metalization System Ø.125 NOM. FULL R C B E H MAXIMUM RATINGS D G F I J K IC 20 A VCBO 45 V VCEO 20 V B C .245 / 6.22 .255 / 6.48 3.0 V D .720 / 18.28 .7.30 / 18.54 VEBO 290 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 .125 / 3.18 .125 / 3.18 E PDISS F .970 / 24.64 .980 / 24.89 G .495 / 12.57 .505 / 12.83 H .003 / 0.08 .007 / 0.18 I .090 / 2.29 .110 / 2.79 J .150 / 3.81 .175 / 4.45 .980 / 24.89 1.050 / 26.67 .280 / 7.11 K L 0.6 °C/W CHARACTERISTICS ORDER CODE: ASI10824 TC = 25 °C NONETEST CONDITIONS SYMBOL MAXIMUM DIM MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 20 V BVCES IC = 100 mA 45 V BVCBO IC = 100 mA 45 V BVEBO IE = 10 mA 4.0 V ICES VCE = 16 V hFE VCE = 5.0 V COB VCB = 12.5 V GP IMD3 ηC VCE = 12.5 V VCE = 12.5 V IC = 5.0 A 10 f = 1.0 MHz ICQ = 150 mA ICQ = 150 mA f = 30 MHz POUT = 100 W 10 mA 200 --pF 650 10 12 -30 40 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. dB dBc % REV. B 1/1