TH9030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI TH9030 is Designed for General Purpose Power oscillator Amplifier Applications up to 2.3 GHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • Common Collector • Hermetic Microstrip Package • Omnigold™ Metalization System L 600 mA VCEO 20 V VCBO 45 V PDISS O O O O O TJ -65 C to +200 C TSTG -65 C to +200 C θJC 25 C/W MAXIMUM inches / mm inches / mm A .028 / 0.71 .032 / 0.81 B .740 / 18.80 C .245 / 6.22 D .128 / 3.25 .255 / 6.48 .132 / 3.35 .125 / 3.18 .117 / 2.97 .110 / 2.79 .117 / 2.97 G 7.0 W @ TC = 25 C NP MINIMUM F 3.0 V I K DIM E VEBO J M MAXIMUM RATINGS IC F H H .560 / 14.22 .570 / 14.48 I .790 / 20.07 .810 / 20.57 J .225 / 5.72 .235 / 5.97 K .165 / 4.19 .185 / 4.70 L .003 / 0.08 .007 / 0.18 M .058 / 1.47 .068 / 1.73 N .119 / 3.02 .135 / 3.43 P .149 / 3.78 .187 / 4.75 O CHARACTERISTICS O TC = 25 C NONETEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS ICBO VCB = 30 V .25 mA IEBO VEB = 2.0 V .25 mA hFE VCE = 5.0 V 120 --- COB VCB = 20 V 2.5 pF POSC VCE = 18 V IC = 100 mA IE = 250 mA 15 f = 1.0 MHz 1.5 f = 2.3 GHz 1.6 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. W REV. A 1/1