MSC1020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI MSC1020 is Designed for General Purpose Class C Power Amplifier Applications up to 1.2 GHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 10 dB min. at 20 W/ 1.0 GHz • Hermetic Microstrip Package • Omnigold™ Metalization System • Emitter Ballasted MINIMUM inches / mm inches / mm A .028 / 0.71 .032 / 0.81 B .740 / 18.80 C .245 / 6.22 D .128 / 3.25 MAXIMUM .255 / 6.48 .132 / 3.35 .125 / 3.18 .110 / 2.79 F .117 / 2.97 .117 / 2.97 G 35 V NP DIM E 1.5 A VCC I K M MAXIMUM RATINGS IC F H J L H .560 / 14.22 .570 / 14.48 I .790 / 20.07 .810 / 20.57 PDISS 35 W @ TC = 25 °C J .225 / 5.72 .235 / 5.97 K .165 / 4.19 .185 / 4.70 TJ -65 °C to +200 °C L .003 / 0.08 .007 / 0.18 M .058 / 1.47 .068 / 1.73 N .119 / 3.02 .135 / 3.43 TSTG -65 °C to +200 °C P .149 / 3.78 .187 / 4.75 θJC 5.0 °C/W CHARACTERISTICS COMMON BASE TC = 25 °C NONETEST CONDITIONS SYMBOL BVCBO IC = 5.0 mA BVCER IC = 15 mA BVEBO IE = 1.0 mA ICBO VCB = 28 V hFE VCE = 5.0 V Cob VCB = 28 V PG ηC VCC = 28 V PI N = 2.0 W RBE = 10 Ω IC = 1.0 A MINIMUM TYPICAL MAXIMUM 45 V 45 V 3.5 V 15 f = 1.0 MHz POUT = 20 W f = 1.0 GHz UNITS 10 55 10.2 58 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5.0 mA 120 --- 19 pF dB % REV. A 1/1