TBN4226 Series Semiconductor Si NPN Transistor Unit in mm SOT-323 □ Applications 2.1±0.1 1.25±0.05 - VHF and UHF low noise amplifier 3 0.30±0.1 □ Features 1 1.30±0.1 2.0±0.2 - Wide band amplifier 2 - High gain bandwidth product 0.15±0.05 fT = 6 GHz at VCE = 3 V, IC = 7 mA fT = 8 GHz at VCE = 3 V, IC = 30 mA 0.90±0.1 |S21|2 = 9.0 dB at VCE = 3 V, IC = 7 mA, f = 1 GHz - Low noise figure NF = 1.2 dB at VCE = 3 V, IC = 7 mA, f = 1 GHz 0~0.1 - High power gain 0.1 Min. Pin Configuration 1. Base 2. Emitter 3. Collector □ Absolute Maximum Ratings (TA = 25 ℃) Symbol Ratings Unit Collector to Base Voltage BVCBO 20 V Collector to Emitter Voltage BVCEO 8 V Emitter to Base Voltage BVEBO 3 V Collector Current IC 100 mA Total Power Dissipation Ptot 150 mW Operating Junction Temperature Tj 150 ℃ Tstg -65 ~ 150 ℃ Parameter Storage Temperature Caution : Electro Static Discharge sensitive device 1 TBN4226 Series □ Electrical Characteristics (TA = 25 ℃) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICBO VCB = 15 V, IE = 0 mA - - 0.5 ㎂ Emitter Cut-off Current IEBO VEB = 2 V, IC = 0 mA - - 0.5 ㎂ DC Current Gain hFE VCE = 3 V, IC = 7 mA 70 100 250 fT VCE = 3 V, IC = 7 mA 4.0 6.0 - GHz |S21|2 VCE = 3 V, IC = 7 mA, f = 1 GHz 7.0 9.0 - dB Noise Figure NF VCE = 3 V, IC = 7 mA, f = 1 GHz - 1.2 2.0 dB Reverse Transfer Capacitance Cre VCB = 3 V, IE = 0 mA, f = 1 MHz - 1.4 pF Gain Bandwidth Product Insertion Power Gain 0.9 □ hFE Classification Marking SM2 SM1 hFE Value 70 - 140 125 - 250 □ Available Package Product Package Unit in mm Dimension TBN4226S SOT-23 2.9 ⅹ 1.3, 1.2t TBN4226U SOT-323 2.0 ⅹ 1.25, 1.0t TBN4226E SOT-523 1.6 ⅹ 0.8, 0.8t TBN4226KF SOT-623F 1.4 ⅹ 0.8, 0.6t 2 TBN4226 Series □ Typical Characteristics ( TA = 25 ℃, unless otherwise specified) Reverse Transfer Capacitance vs. Collector to Base Voltage Total Power Dissipation vs. Ambient Temperature 1.4 Reverse Transfer Capacitance, Cre (pF) Total Power Dissipation, Ptot (mW) 250 Free Air 200 150 100 50 0 0 25 50 75 100 125 150 f = 1 MHz 1.2 1.0 0.8 0.6 0.4 0 o DC Current Gain vs. Collector Current 6 8 10 12 Collector Current vs. Base to Emitter Voltage 200 30 VCE = 3 V Collector Current, IC (mA) 25 150 DC Current Gain, hFE 4 Collector to Base Voltage, VCB (V) Ambient Temperature, TA ( C) 100 50 0 0.1 2 1 10 Collector Current, IC (mA) 100 VCE = 3 V 20 15 10 5 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage, VBE (V) 3 TBN4226 Series Gain Bandwidth Product vs. Collector Current Collector Current vs. Collector to Emitter Voltage 14 Collector Current, IC (mA) 70 Gain Bandwidth Product, fT (GHz) 80 IB Step = 100 µA 60 50 40 30 20 10 0 0 1 2 3 4 5 6 10 8 6 4 2 0 7 VCE = 3 V 12 1 Insertion Power Gain vs. Collector Current Insertion Power Gain vs. Frequency 16 30 2 Insertion Power Gain, |S21| (dB) VCE = 3 V IC = 7 mA 25 2 Insertion Power Gain, |S21| (dB) 100 Collector Current, IC (mA) Collector to Emitter Voltage, VCE (V) 20 15 10 5 0 0.1 10 1 Frequency (GHz) 10 VCE = 3 V f = 1 GHz 14 12 10 8 6 4 2 0 1 10 100 Collector Current, IC (mA) 4 TBN4226 Series Noise Figure vs. Collector Current Maximum Available Gain vs. Collector Current 6 VCE = 3 V f = 1GHz 18 5 16 Noise Figure, NF (dB) Maximum Available Gain, MAG (dB) 20 14 12 10 8 6 4 VCE = 3 V f = 1 GHz 4 3 2 1 2 0 1 10 0 0.1 100 Collector Current, IC (mA) 1 10 100 Collector Current, IC (mA) Noise Parameter vs. Frequency Frequency (GHz) Fmin (dB) rn 0.9 1.0 1.5 2.0 1.27 1.16 1.79 1.91 0.11 0.09 0.08 0.11 Γopt Mag 0.290 0.301 0.436 0.543 Phase 144.4 141.3 -162.9 -143.2 Association gain (dB) 11.58 10.60 8.13 6.45 Gmax (dB) 12.98 11.83 8.57 6.89 5 TBN4226 Series □ Dimensions of TBN4226S in mm SOT -23 □ Dimensions of TBN4226E in mm SOT-523 □ Dimensions of TBN4226KF in mm Pin Configuration (SOT-23, SOT-523, SOT-623F) SOT-623F 1.2 0.8 0.9 Symbol Description 1 B Base 2 E Emitter 3 C Collector 3 0.2 2 0.11 0~0.1 0.6 1.4 1 Pin No. 6